0000000000179506
AUTHOR
P. Bicchi
showing 2 related works from this author
Gallium doped SiO2: Towards a new luminescent material
2007
We show how the interaction between Ga atoms and silica samples in a hot environment gives rise to permanent inclusions of Ga inside the silica matrix which, in turn, produce typical luminescence features. The Ga doped silica is analyzed via laser induced fluorescence, photoluminescence and electron paramagnetic resonance spectroscopies. The results evidence the presence of modifications induced by the Ga inclusions inside the silica matrix and some preliminary hypothesis on their nature are advanced. Possible applications of such Ga doped silica are also mentioned.
Spectroscopy of an optical excited Ga doped SiO2 surface
2007
Abstract We present the first spectroscopical analysis of the Ga/SiO2 surface interaction in hot environment. This interaction gives rise to inclusions of Ga atoms inside the silica matrix that produce structural changes and modify the SiO2 optical characteristics. This paper discusses both the time- and the frequency-resolved spectra of the fluorescence emission following UV pulsed laser excitation of the so “doped” silica in the range 15,000–28,000 cm−1. The investigation is completed by the electron paramagnetic resonance (EPR) spectra of two high-purity synthetic silica samples of commercial origin after thermal treatment in presence and in absence of a Ga atmosphere.