0000000000180130
AUTHOR
Søren Linderoth
Defect recovery in aluminum irradiated with protons at 20 K.
Aluminum single crystals have been irradiated with 7.0-MeV protons at 20 K. The irradiation damage and its recovery are studied with positron-lifetime spectroscopy between 20 and 500 K. Stage-I recovery is observed at 40 K. At 240 K, loss of freely migrating vacancies is observed. Hydrogen in vacancies is found to stabilize the vacancies and prolong stage III to above 280 K, where the hydrogen bound to vacancies is released. Single and multiple occupancy of hydrogen atoms at monovacancies is put forward as the reason for the two recovery stages between 280 and 400 K. A binding energy of 0.53 +- 0.03 eV is found for a hydrogen atom trapped at a monovacancy. The results are in excellent agree…
Hydrogen- and helium-implanted silicon: Low-temperature positron-lifetime studies
High-purity single-crystal samples of float-zoned Si have been implanted with 6.95-MeV protons and with 25-MeV {sup 3}He{sup 2} ions at 15 K, and the positron-lifetime technique has been used to identify the defects created in the samples, and to study the effects of H and He on the annealing of point defects in Si. The results have been compared with those of proton-irradiated Si. A 100--300-K annealing stage was clearly observed in hydrogen (H{sup +}) -implanted Si, and this stage was almost identical to that in the {ital p}-irradiated Si. The final annealing state of the H{sup +}-implanted Si started at about 400 K, and it is connected to annealing out of negatively charged divacancy-oxy…
Segmented Thermoelectric Oxide-Based Module for High-Temperature Waste Heat Harvesting
We report a high-performance thermoelectric (TE) oxide-based module using the segmentation of half-Heusler Ti_(0.3)Zr_(0.35)Hf_(0.35)CoSb_(0.8)Sn_(0.2) and misfit-layered cobaltite Ca_3Co_4O_(9+δ) as the p-leg and 2 % Al-doped ZnO as the n-leg. The maximum output power of a 4-couple segmented module at ΔT=700 K attains a value of approximately 6.5 kW m^(−2), which is three times higher than that of the best reported non-segmented oxide module. The TE properties of individual legs, as well as the interfacial contact resistances, were characterized as a function of temperature. Numerical modeling was used to predict the efficiency and to evaluate the influence of the electrical and thermal lo…
Low-temperature positron-lifetime studies of proton-irradiated silicon
The positron-lifetime technique has been used to identify defects created in high-purity single-crystal silicon by irradiation with 12-MeV protons at 15 K, and the evolution of the defects has been studied by subsequent annealings between 20 and 650 K. Two clear annealing steps were seen in the samples, the first starting at 100 K and the other at 400 K. The first is suggested to be a result of the migration of free, negatively charged monovacancies, and the second is connected to the annealing of some vacancy-impurity complexes, probably negatively charged vacancy-oxygen pairs. The specific trapping rate of positrons to both of these negatively charged monovacancy-type defects has been fou…
Positron Annihilation in Alkali Halides at Low Temperatures
We report on low-temperature positron studies for pure, single crystals of the alkali halides KCl, NaCl and NaF. Strong temperature dependences are observed in the lifetime and angular correlation measurements in the temperature range 10–300 K. Delocalized para-positronium is observed at low temperatures in the three crystals. The broadening, with rising temperature, of the narrow peak in the angular correlation curve can be accounted for by the self-trapping model of positronium. The results are discussed in the light of this model, in terms of positronium localization at imperfections and in terms of positron interactions with imperfections created in the spur of the positron. The increas…
High performance p-type segmented leg of misfit-layered cobaltite and half-Heusler alloy
In this study, a segmented p-type leg of doped misfit-layered cobaltite Ca_(2.8)Lu_(0.15)Ag_(0.05)Co_4O_(9+δ) and half-Heusler Ti_(0.3)Zr_(0.35)Hf_(0.35)CoSb_(0.8)Sn_(0.2) alloy was fabricated and characterized. The thermoelectric properties of single components, segmented leg, and the electrical contact resistance of the joint part were measured as a function of temperature. The output power generation characteristics of segmented legs were characterized in air under various temperature gradients, ΔT, with the hot side temperature up to 1153 K. At ΔT ≈ 756 K, the maximum conversion efficiency reached a value of ∼5%, which is about 65% of that expected from the materials without parasitic l…