0000000000185986
AUTHOR
J. Sils
Oxygen-related defects and energy accumulation in aluminum nitride ceramics
Abstract Features of oxygen-related defects in the AlN crystalline lattice were studied. Spectral characteristics of photoluminescence and photostimulated luminescence under the UV light irradiation of AlN ceramics were examined. The results obtained allow us to propose the mechanisms of luminescence and radiation-induced energy accumulation in AlN.
Exciton-created defects and their participation in energy transfer from excitons to Tl ions in KI–Tl crystal
Abstract Luminescence properties (spectra, yields, kinetics) of Tl ions induced by energy transfer from different types of anion excitons were studied and compared with those observed under direct Tl ion excitation by light quanta from A and C absorption bands in KI–Tl crystal at low temperature. The mechanism of energy transfer from excitons to the impurity ions was proposed based on the exciton-created defects participating in the impurity ion excitation.
Luminescence mechanisms of oxygen-related defects in AlN
Spectral characteristics of native oxygen-related defects existing in the crystalline lattice of AlN were studied. Features of photoluminescence observed under exposure to ultraviolet light together with those of the photostimulated luminescence testify the recombination character of luminescence. The mechanism of luminescence of oxygen-related defects is proposed.