0000000000194230
AUTHOR
Saulius Juršėnas
Carrier localization effect in polarized InGaN multiple quantum wells
Carrier localization effects in polarized InGaN/GaN multiple quantum wells (MQWs) were investigated as a function of well width, d, and In content, x. Using photoreflectance (PR), photoluminescence (PL), PL excitation (PLE), selective excitation of PL, PL excitation power, and time-resolved PL spectroscopy, the dominance of the localization effect against the built-in field effect on carrier recombination dynamics in InxGa1–xN MQWs of different well width (d = 2.0–4.0 nm, x ≈ 0.15) and In content (x ≈ 0.22–0.27, d = 2.5 nm) was revealed. Based on the modeling of the PL spectra by Monte Carlo simulation of exciton hopping and the spectroscopic reference provided by PR, increased In content a…
Effect of Substituents at Imide Positions on the Laser Performance of 1,7-Bay-Substituted Perylenediimide Dyes
Perylenediimide (PDI) compounds with no substituents in their core are widely used as the active units of thin-film organic lasers. Recently, bay-substituted PDIs (b-PDIs) bearing two sterically hindering diphenylphenoxy groups at the 1,7-bay positions have received great attention because they show red-shifted emission with respect to bay-unsubstituted PDIs, while maintaining high photoluminescence (PL) quantum yields and low amplified spontaneous emission (ASE) thresholds even at high doping rates. However, their ASE photostability is relatively low compared to that of state-of-the-art PDIs. Thus, the design of b-PDIs with improved ASE photostability remains a challenge. Here, the synthes…
Stimulated Emission in InGaN/GaN Multiple Quantum Wells with Different Indium Content
1. IntroductionLight-emitting and laser diodes for the green to near-UV region are basedon quantum structures with the InGaN active region [1]. The indium contentin the wells is a technological parameter that provides a straightforward accessfor the change in the color of the light-emitting device. However, the redshift ofthe emission peak with increase in indium content is caused not only by a simplealloying, but also by carrier localization due to difierence in In and Ga atomic
Monte Carlo simulation approach for a quantitative characterization of the band edge in InGaN quantum wells
Monte Carlo simulation approach based on exciton hopping through randomly distributed localized states is proposed for quantitative characterization of the band edge of InxGa1–xN/GaN multiple quantum wells with different indium content (x ≈ 0.22–0.27). The band edge dynamics is investigated in the 10–300 K range by analyzing the measured S- and W-shaped temperature behavior of the photoluminescence peak position and linewidth, respectively. The simulation of the W-shaped temperature dependence using double-scaled potential profile model enabled us to estimate the scale of the potential fluctuations due to variation of indium content inside and among In-rich regions formed in InGaN alloy. In…