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RESEARCH PRODUCT
Stimulated Emission in InGaN/GaN Multiple Quantum Wells with Different Indium Content
I. TaleSaulius MiasojedovasArtūras ŽUkauskasChih-chung YangSaulius JuršėnasM. SpringisG. Kurilčiksubject
Physicsbusiness.industryMultiple quantumGeneral Physics and Astronomychemistry.chemical_elementLaserRedshiftlaw.inventionchemistrylawContent (measure theory)OptoelectronicsStimulated emissionbusinessQuantumIndiumDiodedescription
1. IntroductionLight-emitting and laser diodes for the green to near-UV region are basedon quantum structures with the InGaN active region [1]. The indium contentin the wells is a technological parameter that provides a straightforward accessfor the change in the color of the light-emitting device. However, the redshift ofthe emission peak with increase in indium content is caused not only by a simplealloying, but also by carrier localization due to difierence in In and Ga atomic
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2005-02-01 | Acta Physica Polonica A |