0000000000194223
AUTHOR
G. Kurilčik
Carrier localization effect in polarized InGaN multiple quantum wells
Carrier localization effects in polarized InGaN/GaN multiple quantum wells (MQWs) were investigated as a function of well width, d, and In content, x. Using photoreflectance (PR), photoluminescence (PL), PL excitation (PLE), selective excitation of PL, PL excitation power, and time-resolved PL spectroscopy, the dominance of the localization effect against the built-in field effect on carrier recombination dynamics in InxGa1–xN MQWs of different well width (d = 2.0–4.0 nm, x ≈ 0.15) and In content (x ≈ 0.22–0.27, d = 2.5 nm) was revealed. Based on the modeling of the PL spectra by Monte Carlo simulation of exciton hopping and the spectroscopic reference provided by PR, increased In content a…
Stimulated Emission in InGaN/GaN Multiple Quantum Wells with Different Indium Content
1. IntroductionLight-emitting and laser diodes for the green to near-UV region are basedon quantum structures with the InGaN active region [1]. The indium contentin the wells is a technological parameter that provides a straightforward accessfor the change in the color of the light-emitting device. However, the redshift ofthe emission peak with increase in indium content is caused not only by a simplealloying, but also by carrier localization due to difierence in In and Ga atomic