0000000000194855

AUTHOR

Anna V. Zaporozhchenko

showing 2 related works from this author

Morphological and magnetic analysis of Fe nanostructures on W(110) by using scanning tunneling microscopy and Lorentz microscopy

2016

Abstract We investigated morphological features and magnetic properties of epitaxial Fe nanostructures (films, stripes and nanoparticles) on a W(110) surface with monoatomic steps preferentially along the direction. The nanostructures were prepared in ultra-high vacuum by using electron-beam evaporation and subsequent annealing at different temperatures. Scanning tunneling microscopy measurements in-situ revealed elongated Fe nanostructures with aspect ratios of up to . The observable shape and orientation (along or perpendicular to the monoatomic steps of the substrate) of the nanostructures depended substantially on the preparation parameters. By capping the system with 7 monolayers of Pt…

010302 applied physicsMaterials scienceNanostructureCondensed matter physicsAnnealing (metallurgy)General EngineeringGeneral Physics and Astronomy02 engineering and technology021001 nanoscience & nanotechnologyEpitaxy01 natural scienceslaw.inventionMagnetic fieldCondensed Matter::Materials ScienceCrystallographyMagnetizationlaw0103 physical sciencesMonolayerSingle domainScanning tunneling microscope0210 nano-technologyJapanese Journal of Applied Physics
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Dirakův kužel a pseudogapped hustota stavů v topologické polovině Heuslerovy sloučeniny YPtBi

2016

Topologické izolátory (Tis) jsou zajímavé materiály, které vykazují nebývalé vlastnosti. . Zde jsme prozkoumali sloučeniny YPtBi jako příklad ze třídy polovu-Heuslerových materiálů. Topological insulators (TIs) are exciting materials, which exhibit unprecedented properties, such as helical spinmomentum locking, which leads to large torques for magnetic switching and highly efficient spin current detection. Here we explore the compound YPtBi, an example from the class of half-Heusler materials, for which the typical band inversion of topological insulators was predicted. We prepared this material as thin films by conventional cosputtering from elementary targets. By in situ time-of-flight mo…

topologické izolátoryPhysicsCondensed matter physicsSpintronicsFermi energy02 engineering and technologyengineering.materialSpin current021001 nanoscience & nanotechnologyHeusler compound01 natural sciencesDirac conetopological insulatorsHeuslerovy slitinyTopological insulator0103 physical sciencesHeusler alloysengineeringDensity of statesCondensed Matter::Strongly Correlated ElectronsThin film010306 general physics0210 nano-technologyPhysical Review B
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