0000000000194998
AUTHOR
Markus Brunk
Numerical Simulation of Thermal Effects in Coupled Optoelectronic Device-circuit Systems
The control of thermal effects becomes more and more important in modern semiconductor circuits like in the simplified CMOS transceiver representation described by U. Feldmann in the above article Numerical simulation of multiscale models for radio frequency circuits in the time domain. The standard approach for modeling integrated circuits is to replace the semiconductor devices by equivalent circuits consisting of basic elements and resulting in so-called compact models. Parasitic thermal effects, however, require a very large number of basic elements and a careful adjustment of the resulting large number of parameters in order to achieve the needed accuracy.
SIMULATION OF THERMAL EFFECTS IN OPTOELECTRONIC DEVICES USING COUPLED ENERGY-TRANSPORT AND CIRCUIT MODELS
A coupled model with optoelectronic semiconductor devices in electric circuits is proposed. The circuit is modeled by differential-algebraic equations derived from modified nodal analysis. The transport of charge carriers in the semiconductor devices (laser diode and photo diode) is described by the energy-transport equations for the electron density and temperature, the drift-diffusion equations for the hole density, and the Poisson equation for the electric potential. The generation of photons in the laser diode is modeled by spontaneous and stimulated recombination terms appearing in the transport equations. The devices are coupled to the circuit by the semiconductor current entering the…
Numerical Simulation of Thermal Effects in Electric Circuits via Energy Transport equations
In this work we present the coupling of stationary energy-transport (ET) equations with Modified Nodal Analysis (MNA)-equations to model electric circuits containing semiconductor devices. The one-dimensional ET-equations are discretised in space by an exponential fitting mixed hybrid finite element approach to ensure current continuity and positivity of charge carriers. The discretised ET-equations are coupled to MNA-equations and the resulting system is solved with backwarddifference formulas. Numerical examples are shown for a test circuit containing a pn-diode, and the results are compared to those achieved using the drift-diffusion model to describe the semiconductor devices in the cir…