0000000000204777
AUTHOR
Aleksey Bazakutsa
Impact of fluorine admixture, hydrogen loading, and exposure to ArF excimer laser on photoluminescence of bismuth defects in amorphous silica
Abstract Photoluminescence (PL) excited by ArF (193 nm), KrF (248 nm) and N 2 (337 nm) pulsed lasers is studied in bismuth doped unfused silicon dioxide synthesized on silica substrates by surface-plasma chemical vapor deposition (SPCVD). Additive free and fluorinated (F content ~ 0.4 wt.%) amorphous silica are examined as host materials for bismuth. Three typical PL bands peaking at wavelengths of 650 nm (orange), 800 nm and 1400 nm (near infrared, NIR) were observed. It is found that fluorine additive weakly affects PL detail of as deposited samples. However, hydrogen loading completely deactivates NIR PL in the case of fluorine free sample, but only slightly suppresses the NIR band in fl…
Intra-center and recombination luminescence of bismuth defects in fused and unfused amorphous silica fabricated by SPCVD
Abstract Photoluminescence (PL) of bismuth doped silicon dioxide excited by UV excimer lasers (ArF — 193 nm, KrF — 248 nm) and a green light laser diode (532 nm) is studied in a wide spectral band at temperatures ranging from 12 to 750 K. Two types of samples are investigated: unfused, 100 μm in thickness amorphous layer immediately deposited on the inner surface of silica substrate tube, and the same material after profusion resulted from tube collapsing to a rod by external heating. PL bands centered at 620–650 nm, 820 nm and 1400 nm wavelengths are observed in both fused and unfused samples. Under excitation by the green laser diode decay time constants for 650 nm (orange) and 1400 nm (N…