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RESEARCH PRODUCT

Intra-center and recombination luminescence of bismuth defects in fused and unfused amorphous silica fabricated by SPCVD

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Abstract Photoluminescence (PL) of bismuth doped silicon dioxide excited by UV excimer lasers (ArF — 193 nm, KrF — 248 nm) and a green light laser diode (532 nm) is studied in a wide spectral band at temperatures ranging from 12 to 750 K. Two types of samples are investigated: unfused, 100 μm in thickness amorphous layer immediately deposited on the inner surface of silica substrate tube, and the same material after profusion resulted from tube collapsing to a rod by external heating. PL bands centered at 620–650 nm, 820 nm and 1400 nm wavelengths are observed in both fused and unfused samples. Under excitation by the green laser diode decay time constants for 650 nm (orange) and 1400 nm (NIR) PL bands measured at room temperature amount 3 μs and 600 μs respectively. These rather long decay times point to partly forbidden intra-center electron transitions. PL intensities of the orange and NIR bands are not temperature dependent within 12–450 K range. At higher temperatures the orange band manifests an intra-center thermal quenching, activation energy and frequency factor being 0.42 ± 0.04 eV and 5·10 9  s − 1 respectively, while intensity of the NIR band weakly depends on temperature up to 700 K. Electron-hole recombination excitation mechanism is found to contribute to the orange, but not to the NIR PL band under UV laser pumping. The specific feature of orange PL excited by recombination is the magnitude of decay time constant being about milliseconds at temperature of 12 K and decreasing with the temperature increase. Localized state ionization and two-photon absorption of intense UV light excite electron-hole pairs in silica host. Some bismuth defects serve as traps for the electrons, while holes transmute into self-trapped state thus generating self-trapped holes (STHs). Thermally activated escape of the STHs followed by their subsequent recombination with trapped electrons forms the mechanism to transfer the excitation to particular bismuth defects responsible for orange PL. At the same time no signature of the impact of such recombination process on the excitation of NIR PL is observed. This permits one to conclude that the nature of bismuth defects responsible for these two PL bands varies, and these two types of defects are available in both fused and infused silicon dioxides.