45° sign switching of effective exchange bias due to competing anisotropies in fully epitaxial Co3FeN/MnN bilayers

We report an unusual angular-dependent exchange bias effect in ferromagnet/antiferromagnet bilayers, where both ferromagnet and antiferromagnet are epitaxially grown. Numerical model calculations predict an approximately 45° period for the sign switching of the exchange-bias field, depending on the ratio between magnetocrystalline anisotropy and exchange-coupling constant. The switching of the sign is indicative of a competition between a fourfold magnetocrystalline anisotropy of the ferromagnet and a unidirectional anisotropy field of the exchange coupling. This predicted unusual angular-dependent exchange bias and its magnetization switching process are confirmed by measurements on fully …

Reliable magnetic domain wall propagation in cross structures for advanced multi-turn sensor devices

We develop and analyze an advanced concept for domain wall based sensing of rotations. Moving domain walls in n closed loops with n-1 intersecting convolutions by rotating fields, we can sense n rotations. By combining loops with coprime numbers of rotations, we create a sensor system allowing for the total counting of millions of turns of a rotating applied magnetic field. We analyze the operation of the sensor and identify the intersecting cross structures as the critical component for reliable operation. In particular depending on the orientation of the applied field angle with the magnetization in the branches of the cross, a domain wall is found to propagate in an unwanted direction yi…

Angular dependence of the domain wall depinning field in the sensors with segmented corners

Rotating domain wall based sensors that have recently been developed are based on a segmented looping geometry. In order to determine the crucial pinning of domain walls in this special geometry, we investigate the depinning under different angles of an applied magnetic field and obtain the angular dependence of the depinning field of the domain walls. Due to the geometry, the depinning field not only exhibits a 180$^\circ$-periodicity but a more complex dependence on the angle. The depinning field depends on two different angles associated with the initial state and the segmented geometry of the corner. We find that depending on the angle of the applied field two different switching proces…

Geometrical dependence of domain wall propagation and nucleation fields in magnetic domain wall sensor devices

We study the key domain wall properties in segmented nanowires loop-based structures used in domain wall based sensors. The two reasons for device failure, namely the distribution of domain wall propagation field (depinning) and the nucleation field are determined with Magneto-Optical Kerr Effect (MOKE) and Giant Magnetoresistance (GMR) measurements for thousands of elements to obtain significant statistics. Single layers of Ni$_{81}$Fe$_{19}$, a complete GMR stack with Co$_{90}$Fe$_{10}$/Ni$_{81}$Fe$_{19}$ as a free layer and a single layer of Co$_{90}$Fe$_{10}$ are deposited and industrially patterned to determine the influence of the shape anisotropy, the magnetocrystalline anisotropy an…

Staggered magnetic nanowire devices for effective domain-wall pinning in racetrack memory

Domain-wall memory devices, in which the information is stored in nanowires, are expected to replace hard disk drives. A problem that remains to be solved in domain-wall memory is to pin the domain walls in a controllable manner at the nanometer scale using simple fabrication. We demonstrate the possibility to stabilize domain walls by making staggered nanowires. Controllable domain-wall movement is exhibited in permalloy nanowires using magnetic fields where the pinning field is about 10 mT. The pinning field and stability of the domain walls can be increased by adjusting the offset dimensions of the staggered nanowires. Domain-wall velocities of about 200 m/s are computed for the experime…

Geometrically enhanced closed-loop multi-turn sensor devices that enable reliable magnetic domain wall motion

We experimentally realize a sophisticated structure geometry for reliable magnetic domain wall-based multi-turn-counting sensor devices, which we term closed-loop devices that can sense millions of turns. The concept relies on the reliable propagation of domain walls through a cross-shaped intersection of magnetic conduits, allowing for the intertwining of loops of the sensor device. As a key step to reach the necessary reliability of the operation, we develop a combination of tilted wires called the syphon structure at the entrances of the cross. We measure the control and reliability of the domain wall propagation individually for cross-shaped intersections, the syphon geometries, and fin…

Magnetization switching behavior with competing anisotropies in epitaxial Co3FeN/MnN exchange-coupled bilayers

Reliable Propagation of Magnetic Domain Walls in Cross Structures for Advanced Multiturn Sensors

[EN] We develop and analyze an advanced concept for a domain-wall-based sensing of rotations. Moving domain walls in n closed loops with n - 1 intersecting convolutions by rotating fields, we are able to sense n rotations. By combining loops with coprime numbers of rotations, we create a sensor system allowing for the total counting of millions of turns of a rotating applied magnetic field. We analyze the operation of the sensor and identify the intersecting cross structures as the critical component for reliable operation. Specifically, depending on the orientation of the applied field angle with the magnetization in the branches of the cross, a domain wall is found to propagate in an unwa…