0000000000222210
AUTHOR
Talivaldis Puritis
<title>New aspect of light emission from silicon nanocrystals</title>
Intensive light emission (photoluminescence) from silicon nanocrystals has been interpreted in literature as recombinative emission. It has been supposed that the band structure is "pseidodirect." The literature analysis presented in our paper shows that the band structure is indirect and therefore intensive recombinative emission is not possible. According to new aspect, a part of electrons reaches the second conduction subband due to Auger recombination. Then the intensive visible radiation could be caused by transitions of these electrons from the second to the first conduction subband. We have constructed continuity equations for the electron concentration in the first and the second co…
Radiative phonon-assisted and Auger recombination in Si nanocrystals
Abstract Recent analysis of the literature shows that the photoluminescence (PL) of Si nanocrystals and porous silicon is caused by phonon-assisted exciton radiative recombination, as well as by direct radiative electron transfer from the second to the first conduction sub-band, which is related to the Auger recombination. The PL decay curve for porous silicon after excitation with ultraviolet laser pulse has been established experimentally. We have constructed continuity equations for the first and the second conduction sub-bands, including radiative phonon-assisted exciton recombination, Auger recombination and direct radiative transition from the second to the first conduction sub-band. …
Mechanisms of Strong Photoluminescence from Si Nanocrystals
Photoluminescence mechanisms (models) are reviewed and experimental data are analyzed based on our model, related to direct radiative transitions from the second conduction sub-band to the first one.
Photoluminescence from silicon nanocrystals initiated by Auger recombination
Abstract The mechanism of intense photoluminescence (PL) of silicon nanocrystals (nc-si), so interpreted as recombinative emission is reconsidered. Analysis of available theoretical and experimental data is presented to show that nc-si have an indirect band structure and, therefore, it is doubtful that electron–hole recombination is the only mechanism of intense emission. A model is proposed according to which a fraction of electrons reaches the second conduction sub-band by Auger recombination, a part of intense visible radiation being caused by direct electron transitions from the second conduction sub-band to the first one. Continuity equations are constructed in the first and the second…