Analytic and SPICE modeling of stochastic ReRAM circuits

Transient dynamics of pulse-driven memristors in the presence of a stable fixed point

Abstract Some memristors are quite interesting from the point of view of dynamical systems. When driven by narrow pulses of alternating polarities, their dynamics has a stable fixed point, which may be useful for future applications. We study the transient dynamics of two types of memristors characterized by a stable fixed point using a time-averaged evolution equation. Time-averaged trajectories of the Biolek window function memristor and resistor-threshold type memristor circuit (an effective memristor) are determined analytically, and the times of relaxation to the stable fixed point are found. Our analytical results are in perfect agreement with the results of numerical simulations.

Kinks and antikinks of buckled graphene: A testing ground for phi^4 field model

Kinks and antikinks of the classical ${\ensuremath{\varphi}}^{4}$ field model are topological solutions connecting its two distinct ground states. Here we establish an analogy between the excitations of a long graphene nanoribbon buckled in the transverse direction and ${\ensuremath{\varphi}}^{4}$ model results. Using molecular dynamics simulations, we investigated the dynamics of a buckled graphene nanoribbon with a single kink and with a kink-antikink pair. Several features of the ${\ensuremath{\varphi}}^{4}$ model have been observed including the kink-antikink capture at low energies, kink-antikink reflection at high energies, and a bounce resonance. Our results pave the way towards the …

Bifurcation analysis of a TaO memristor model

This paper presents a study of bifurcation in the time-averaged dynamics of TaO memristors driven by narrow pulses of alternating polarities. The analysis, based on a physics-inspired model, focuses on the stable fixed points and on how these are affected by the pulse parameters. Our main finding is the identification of a driving regime when two stable fixed points exist simultaneously. To the best of our knowledge, such bistability is identified in a single memristor for the first time. This result can be readily tested experimentally, and is expected to be useful in future memristor circuit designs.

Dynamical attractors of memristors and their networks

It is shown that the time-averaged dynamics of memristors and their networks periodically driven by alternating-polarity pulses may converge to fixed-point attractors. Starting with a general memristive system model, we derive basic equations describing the fixed-point attractors and investigate attractors in the dynamics of ideal, threshold-type and second-order memristors, and memristive networks. A memristor potential function is introduced, and it is shown that in some cases the attractor identification problem can be mapped to the problem of potential function minimization. Importantly, the fixed-point attractors may only exist if the function describing the internal state dynamics dep…

Modeling Networks of Probabilistic Memristors in SPICE

Efficient simulation of stochastic memristors and their networks requires novel modeling approaches. Utilizing a master equation to find occupation probabilities of network states is a recent major departure from typical memristor modeling [Chaos, solitons fractals 142, 110385 (2021)]. In the present article we show how to implement such master equations in SPICE – a general purpose circuit simulation program. In the case studies we simulate the dynamics of acdriven probabilistic binary and multi-state memristors, and dc-driven networks of probabilistic binary and multi-state memristors. Our SPICE results are in perfect agreement with known analytical solutions. Examples of LTspice code are…

Theory of Heterogeneous Circuits With Stochastic Memristive Devices

We introduce an approach based on the Chapman-Kolmogorov equation to model heterogeneous stochastic circuits, namely, the circuits combining binary or multi-state stochastic memristive devices and continuum reactive components (capacitors and/or inductors). Such circuits are described in terms of occupation probabilities of memristive states that are functions of reactive variables. As an illustrative example, the series circuit of a binary memristor and capacitor is considered in detail. Some analytical solutions are found. Our work offers a novel analytical/numerical tool for modeling complex stochastic networks, which may find a broad range of applications.

Metastable memristive lines for signal transmission and information processing applications

Traditional studies of memristive devices have mainly focused on their applications in nonvolatile information storage and information processing. Here, we demonstrate that the third fundamental component of information technologies-the transfer of information-can also be employed with memristive devices. For this purpose, we introduce a metastable memristive circuit. Combining metastable memristive circuits into a line, one obtains an architecture capable of transferring a signal edge from one space location to another. We emphasize that the suggested metastable memristive lines employ only resistive circuit components. Moreover, their networks (for example, Y-connected lines) have an info…

Switching synchronization in one-dimensional memristive networks: An exact solution.

We study a switching synchronization phenomenon taking place in one-dimensional memristive networks when the memristors switch from the high- to low-resistance state. It is assumed that the distributions of threshold voltages and switching rates of memristors are arbitrary. Using the Laplace transform, a set of nonlinear equations describing the memristors dynamics is solved exactly, without any approximations. The time dependencies of memristances are found, and it is shown that the voltage falls across memristors are proportional to their threshold voltages. A compact expression for the network switching time is derived.

Probabilistic Memristive Networks: Application of a Master Equation to Networks of Binary ReRAM cells

Abstract The possibility of using non-deterministic circuit components has been gaining significant attention in recent years. The modeling and simulation of their circuits require novel approaches, as now the state of a circuit at an arbitrary moment in time cannot be predicted deterministically. Generally, these circuits should be described in terms of probabilities, the circuit variables should be calculated on average, and correlation functions should be used to explore interrelations among the variables. In this paper, we use, for the first time, a master equation to analyze the networks composed of probabilistic binary memristors. Analytical solutions of the master equation for the ca…

Switching Synchronization and Metastable States in 1D Memristive Networks

One-dimensional (1D) memristive networks are the simplest type of memristive networks one can imagine. Yet, despite their morphological simplicity, such networks represent an important class of memory networks characterized by the strongest interaction among the network components. This chapter reviews several important dynamical features of 1D memristive networks composed of realistic threshold-type memristive systems. First of all, the accelerated and decelerated switching regimes of memristive systems are introduced and exemplified. Secondly, the phenomenon of switching synchronization is presented. Finally, it is shown that metastable transmission lines composed of metastable memristive…

Importance of the Window Function Choice for the Predictive Modelling of Memristors

Window functions are widely employed in memristor models to restrict the changes of the internal state variables to specified intervals. Here, we show that the actual choice of window function is of significant importance for the predictive modelling of memristors. Using a recently formulated theory of memristor attractors, we demonstrate that whether stable fixed points exist depends on the type of window function used in the model. Our main findings are formulated in terms of two memristor attractor theorems, which apply to broad classes of memristor models. As an example of our findings, we predict the existence of stable fixed points in Biolek window function memristors and their absenc…