0000000000246363

AUTHOR

Rainer Waser

showing 7 related works from this author

Poster: Polar Dielectrics, Optics, and Ionics

2013

Materials sciencebusiness.industryNanostructured materialsPolarOptoelectronicsNanotechnologyDielectricbusinessElectronic materials
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Nanosession: Ionics - Redox Kinetics, Ion Transport, and Interfaces

2013

Materials scienceKineticsInorganic chemistryRedoxIon transporter
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Nanosession: Valence Change Memories - A Look Inside

2013

Materials scienceCondensed matter physicsValence (psychology)
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Valence change ReRAMs (VCM) - Experiments and modelling: General discussion

2019

Valence change ReRAMs (VCM) - Experiments and modelling: General discussion

PhysicsValence (chemistry)Settore ING-IND/23 - Chimica Fisica ApplicataCondensed matter physicsUT-Hybrid-DValence change ReRAMs (VCM) Experiments modellingPhysical and Theoretical Chemistry22/4 OA procedure
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Spectroscopic study of the electric field induced valence change of Fe-defect centers in SrTiO(3)

2011

The electrochemical changes induced by an electric field in Fe-doped SrTiO(3) have been investigated by X-ray absorption spectroscopy (XANES and EXAFS), electron paramagnetic resonance (EPR) and Raman spectroscopy. A detailed study of the Fe dopant in the regions around the anode and cathode reveals new insights into the local structure and valence state of Fe in SrTiO(3) single crystals. The ab initio full multiple-scattering XANES calculations give an evidence of the oxygen vacancy presence in the first coordination shell of iron. Differences in the length and disorder of the Fe-O bonds as extracted from EXAFS are correlated to the unequivocal identification of the defect type by compleme…

010302 applied physicsValence (chemistry)Absorption spectroscopyExtended X-ray absorption fine structureChemistryAb initioGeneral Physics and Astronomy02 engineering and technology021001 nanoscience & nanotechnology01 natural sciencesXANESlaw.inventionJsymbols.namesakeCrystallographyOxidation statelaw0103 physical sciencesddc:540symbolsPhysical and Theoretical Chemistry0210 nano-technologyElectron paramagnetic resonanceRaman spectroscopy
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Electrochemical metallization ReRAMs (ECM) - Experiments and modelling: general discussion

2019

Electrochemical metallization ReRAMs (ECM) - Experiments and modelling: General discussion

Settore ING-IND/23 - Chimica Fisica ApplicataMaterials scienceElectrochemical metallization ReRAMs Experiments modellingNanotechnologyOtaNanoPhysical and Theoretical ChemistryElectrochemistry22/4 OA procedure
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Electrochemical Tantalum Oxide for Resistive Switching Memories

2017

Redox-based resistive switching memories (ReRAMs) are strongest candidates for the next-generation nonvolatile memories fulfilling the criteria for fast, energy efficient, and scalable green IT. These types of devices can also be used for selector elements, alternative logic circuits and computing, and memristive and neuromorphic operations. ReRAMs are composed of metal/solid electrolyte/metal junctions in which the solid electrolyte is typically a metal oxide or multilayer oxides structures. Here, this study offers an effective and cheap electrochemical approach to fabricate Ta/Ta2O5-based devices by anodizing. This method allows to grow high-quality and dense oxide thin films onto a metal…

Materials scienceReRAMOxide02 engineering and technologyElectrolyte010402 general chemistry01 natural scienceschemistry.chemical_compoundmultilevelDispersion (optics)General Materials ScienceMechanics of MaterialThin filmAnodic thin filmbusiness.industryAnodizingresistive switchingMechanical EngineeringNanosecond021001 nanoscience & nanotechnology0104 chemical sciencesSettore ING-IND/23 - Chimica Fisica ApplicatachemistryNeuromorphic engineeringMechanics of MaterialsLogic gateOptoelectronicsMaterials Science (all)0210 nano-technologybusinesstantalum oxide
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