0000000000247737
AUTHOR
N.p. Barradas
A study of solar thermal absorber stack based on CrAlSiNx/CrAlSiNxOy structure by ion beams
Renewable energies are foreseen as a major energy resource for next generations. Among several energy sources and technologies available, Concentrated Solar Power (CSP) technology has a great potential, but it needs to be optimised, in particular to reduce the costs, with an increase of the operating temperature and long term stability. This goal can be achieved by tailoring the composition and multilayer structure of films. In this work we present and discuss the results obtained from solar absorber coatings based on nitride/oxynitride structures. A four-layer film structure, W/CrAlSiNx(HA)/CrAlSiNxOy(LA)/SiAlOx, was deposited on stainless steel substrates using magnetron sputtering deposi…
New experimental molecular stopping cross section data of Al2O3, for heavy ions
Abstract Molecular stopping cross section data of Al2O3, for heavy ions of 12C, 16O, 28Si, 35Cl, 79Br within the energy range of 0.01–1.0 MeV/nucleon were measured. Both direct transmission and bulk analysis methods were applied. Stopping cross sections were calculated both with the SRIM and MSTAR codes. Evaluation and intercomparison of the new data with the calculated and previously measured ones are reported in this paper.
Determination of molecular stopping cross section of 12C, 16O, 28Si, 35Cl, 58Ni, 79Br, and 127I in silicon nitride
Abstract Silicon nitride is a technologically important material in a range of applications due to a combination of important properties. Ion beam analysis techniques, and in particular, heavy ion elastic recoil detection analysis can be used to determine the stoichiometry of silicon nitride films, which often deviates from the ideal Si3N4, as well as the content of impurities such as hydrogen, even in the presence of other materials or in a matrix containing heavier elements. Accurate quantification of IBA results depends on the basic data used in the data analysis. Quantitative depth profiling relies on the knowledge of the stopping power cross sections of the materials studied for the io…