0000000000249365

AUTHOR

Anders Hallén

0000-0002-8760-1137

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High‐Quality Si‐Doped β‐Ga 2 O 3 Films on Sapphire Fabricated by Pulsed Laser Deposition

2020

The EU Horizon 2020 project CAMART2 is acknowledged for partly supporting the project, and the Ion Technology Centre, ITC, in Sweden is acknowledged for ion beam analysis (ERDA).

010302 applied physicsFabricationMaterials sciencebusiness.industrydiodesSi doped02 engineering and technologyfabrication021001 nanoscience & nanotechnologyCondensed Matter Physics01 natural sciencesElectronic Optical and Magnetic MaterialsPulsed laser depositiongallium oxideGallium oxideQuality (physics)wide bandgap0103 physical sciencesSapphire:NATURAL SCIENCES:Physics [Research Subject Categories]Optoelectronics0210 nano-technologybusinesspulsed laser depositionDiodephysica status solidi (b)
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