6533b7d5fe1ef96bd1263e9d
RESEARCH PRODUCT
High‐Quality Si‐Doped β‐Ga 2 O 3 Films on Sapphire Fabricated by Pulsed Laser Deposition
Anders HallénJuris PuransSergiy KhartsevMattias HammarNils Nordellsubject
010302 applied physicsFabricationMaterials sciencebusiness.industrydiodesSi doped02 engineering and technologyfabrication021001 nanoscience & nanotechnologyCondensed Matter Physics01 natural sciencesElectronic Optical and Magnetic MaterialsPulsed laser depositiongallium oxideGallium oxideQuality (physics)wide bandgap0103 physical sciencesSapphire:NATURAL SCIENCES:Physics [Research Subject Categories]Optoelectronics0210 nano-technologybusinesspulsed laser depositionDiodedescription
The EU Horizon 2020 project CAMART2 is acknowledged for partly supporting the project, and the Ion Technology Centre, ITC, in Sweden is acknowledged for ion beam analysis (ERDA).
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2020-09-23 | physica status solidi (b) |