Search results for "Sapphire"
showing 10 items of 114 documents
High‐Quality Si‐Doped β‐Ga 2 O 3 Films on Sapphire Fabricated by Pulsed Laser Deposition
2020
The EU Horizon 2020 project CAMART2 is acknowledged for partly supporting the project, and the Ion Technology Centre, ITC, in Sweden is acknowledged for ion beam analysis (ERDA).
Induced crystallographic changes in Cd1−xZnxO films grown on r-sapphire by AP-MOCVD: the effects of the Zn content when x ≤ 0.5
2020
High-resolution X-ray diffraction, scanning electron microscopy and transmission electron microscopy techniques were used to investigate, as a function of the nominal Zn content in the range of 0–50%, the out-of-plane and in-plane crystallographic characteristics of Cd1−xZnxO films grown on r-plane sapphire substrates via atmospheric pressure metal–organic chemical vapor deposition. The study is conducted to search for knowledge relating to the structural details during the transition process from a rock-salt to a wurtzite structure as the Zn content increases in this CdO–ZnO system. It has been found that it is possible to obtain films exhibiting a single (001) cubic orientation with good …
Comparison of the F-type center thermal annealing in heavy-ion and neutron irradiated Al2O3 single crystals
2018
Abstract The optical absorption and thermally stimulated luminescence of Al2O3 (sapphire) single crystals irradiated with swift heavy ions (SHI) 238U with energy 2.4 GeV is studied with the focus on the thermal annealing of the F-type centers in a wide temperature range of 400–1500 K. Its theoretical analysis allows us to obtain activation energies and pre-exponentials of the interstitial oxygen ion migration, which recombine with both types of immobile electron centers (F and F+ centers). A comparison of these kinetics parameters with literature data for a neutron-irradiated sapphire shows their similarity and thus supports the use of SHI-irradiation for modeling the neutron irradiation.
Correlation between in situ structural and optical characterization of the semiconductor-to-metal phase transition of VO2 thin films on sapphire
2020
A detailed structural investigation of the semiconductor-to-metal transition (SMT) in vanadium dioxide thin films deposited on sapphire substrates by pulsed laser deposition was performed by in situ temperature-dependent X-ray diffraction (XRD) measurements. The structural results are correlated with those of infrared radiometry measurements in the SWIR (2.5-5 μm) and LWIR (8-10.6 μm) spectral ranges. The main results indicate a good agreement between XRD and optical analysis, therefore demonstrating that the structural transition from monoclinic to tetragonal phases is the dominating mechanism for controlling the global properties of the SMT transition. The picture that emerges is a SMT tr…
Defect-related photoluminescence and photoluminescence excitation as a method to study the excitonic bandgap of AlN epitaxial layers: Experimental an…
2020
We report defect-related photoluminescence (PL) and its vacuum ultraviolet photoluminescence excitation (PLE) spectra of aluminum nitride layers with various layer thicknesses and dislocation densities grown on two different substrates: sapphire and silicon. The defect-related transitions have been distinguished and examined in the emission and excitation spectra investigated under synchrotron radiation. The broad PL bands of two defect levels in the AlN were detected at around 3 eV and 4 eV. In the PLE spectra of these bands, a sharp excitonic peak originating most probably from the A-exciton of AlN was clearly visible. Taking into account the exciton binding energy, the measurements allow…
Compact setup for spin-, time-, and angle-resolved photoemission spectroscopy.
2020
Review of scientific instruments 91(6), 063001 (2020). doi:10.1063/5.0004861
Hot-cavity studies for the Resonance Ionization Laser Ion Source
2016
International audience; The Resonance Ionization Laser Ion Source (RILIS) has emerged as an important technique in many Radioactive Ion Beam (RIB) facilities for its reliability, and ability to ionize target elements efficiently and element selectively. GISELE is an off-line RILIS test bench to study the implementation of an on-line laser ion source at the GANIL separator facility. The aim of this project is to determine the best technical solution which combines high selectivity and ionization efficiency with small ion beam emittance and stable long term operation. The ion source geometry was tested in several configurations in order to find a solution with optimal ionization efficiency an…
Measurement of the laser resonance ionization efficiency for lutetium
2019
Abstract The development of a highly efficient resonance ionization scheme for lutetium is presented. A laser ion source, based on the all-solid-state Titanium:sapphire laser system, was used at the 30 keV RISIKO off-line mass separator to characterize different possible optical excitation schemes in respect to their ionization efficiency. The developed laser resonance ionization scheme can be directly applied to the use at radioactive ion beam facilities, e. g. at the CERN-MEDICIS facility, for large-scale production of medical radioisotopes.
Crack formation and cleaving of sapphire with ultrafast bessel beams
2017
Sapphire is a transparent crystalline dielectric of high hardness with many important applications, specifically to the next-generation touchscreens and to the LED growth, as substrates. However, sapphire cutting by ablative techniques is rather slow therefore fast material separation techniques are needed. Material separation by “stealth dicing” has been recently developed, it is based on material cleaving along a plane weakened by multiple ultrafast laser illuminations. This allows usually generating taper-free cutting and avoids material loss. However, the illuminated plane needs small spacing between the shot to shot (typically a few μm) and long damages inside the bulk. This requires l…
Highly efficient isotope separation and ion implantation of 163Ho for the ECHo project
2019
Abstract The effective electron neutrino mass measurement in the framework of the ECHo experiment requires radiochemically pure 163 Ho, which is ion implanted into detector absorbers. To meet the project specifications in efficiency and purity, the entire process chain of ionization, isotope separation , and implantation of 163Ho was optimized. A new two-step resonant laser ionization scheme was established at the 30 kV magnetic mass separator RISIKO. For ionization and separation, an average efficiency of 69 ( 5 ) stat(4)sys% was achieved using intra-cavity frequency doubled Ti:sapphire lasers. The implantation of undesired 166 m Ho, which is present in trace amounts in the initial 163Ho…