Search results for "fabrication"

Phosphorous doping and drawing effects on the Raman spectroscopic properties of O=P bond in silica-based fiber and preform.

2012

International audience; We report an experimental study of the doping and drawing effects on the Raman activities of phosphorus (P)-doped silica-based optical fiber and its related preform. Our data reveal a high sensitivity level in the full width at half maximum value of the 1330 cm−1 (O = P) Raman band to the P-doping level. Its increase with the P doping level does not clash with an increase in the disorder of the O = P surrendering matrix. In addition, we observe that in the central core region of the sample (higher doping level), the drawing process decreases the relative band amplitude. We tentatively suggest that this phenomenon is due to the change in the first derivate of the bond…

High‐Quality Si‐Doped β‐Ga 2 O 3 Films on Sapphire Fabricated by Pulsed Laser Deposition

2020

The EU Horizon 2020 project CAMART2 is acknowledged for partly supporting the project, and the Ion Technology Centre, ITC, in Sweden is acknowledged for ion beam analysis (ERDA).

Key factors towards a high-quality additive manufacturing process with ABS material

2019

Abstract Additive Manufacturing technologies have gained a lot of popularity during the past years. The current challenge being the transition of this manufacturing technology from prototype oriented towards mass production. In order to achieve this, fabrication times and mechanical parameters must be improved. This paper aims to identify which are the parameters that have the highest influence on parts obtained with fused deposition modeling (FDM) technology from ABS material. In addition, this study identifies which are the most accurate methods to test the mechanical properties of FDM parts while still respecting ASTM standard for testing the tensile properties of plastics. It was found …

HCl gas gettering of low-cost silicon

2013

HCl gas gettering is a cheap and simple technique to reduce transition metal concentrations in silicon. It is attractive especially for low-cost silicon materials like upgraded metallurgical grade (UMG) silicon, which usually contain 3d transition metals in high concentrations. Etching of silicon by HCl gas occurs during HCl gas gettering above a certain onset temperature. The etching rate as well as the gettering efficiency was experimentally determined as a function of the gettering temperature, using UMG silicon wafers. The activation energy of the etching reaction by HCl gas was calculated from the obtained data. The gettering efficiency was determined by analyzing Ni as a representativ…

Development, Characterization, and Testing of a SiC-Based Material for Flow Channel Inserts in High-Temperature DCLL Blankets

2018

This work has been carried out within the framework of the EUROfusion Consortium. The views and opinions expressed herein do not necessarily reflect those of the European Commission.

Nanoscale Etching of GaAs and InP in Acidic H<sub>2</sub>O<sub>2</sub> Solution: A Striking Contrast in Kinetics and Surface …

2018

In this study of nanoscale etching for state-of-the-art device technology the importance of the nature of the surface oxide, is demonstrated for two III-V materials. Etching kinetics for GaAs and InP in acidic solutions of hydrogen peroxide are strikingly different. GaAs etches much faster, while the dependence of the etch rate on the H+ concentration differs markedly for the two semiconductors. Surface analysis techniques provided information on the surface composition after etching: strongly non-stoichiometric porous (hydr)oxides on GaAs and a thin stoichiometric oxide that forms a blocking layer on InP. Reaction schemes are provided that allow one to understand the results, in particular…

Microfabricated high temperature sensing platform dedicated to scanning thermal microscopy (SThM)

2018

Abstract The monitoring of heat flux is becoming more and more critical for many materials and structures approaching nanometric dimensions. Scanning Thermal Microscopy (SThM) is one of the tools available for thermal measurement at the nanoscale and requires calibration. Here we report on a micro-hotplate device made of a platinum heater suspended on thin silicon nitride (SiN) membranes integrating specific features for SThM calibration. These heated reference samples can include a localized resistive temperature sensors (RTD) or standalone platinum membranes (typically 10 × 10 μm2) on which the temperature can be measured precisely. This functional area is dedicated to (1) estimate the th…

2017

Significant progress in nonlinear and ultrafast optics has recently opened new and exciting opportunities for terahertz (THz) science and technology, which require the development of reliable THz sources, detectors, and supporting devices. In this work, we demonstrate the first solid-state technique for the coherent detection of ultra-broadband THz pulses (0.1–10 THz), relying on the electric-field-induced second-harmonic generation in a thin layer of ultraviolet fused silica. The proposed CMOS-compatible devices, which can be realized with standard microfabrication techniques, allow us to perform ultra-broadband detection with a high dynamic range by employing probe laser powers and bias v…

Influence of the Fabrication Accuracy of Hot-Embossed PCL Scaffolds on Cell Growths

2020

Polycaprolactone (PCL) is a biocompatible and biodegradable polymer widely used for the realization of 3D scaffold for tissue engineering applications. The hot embossing technique (HE) allows the obtainment of PCL scaffolds with a regular array of micro pillars on their surface. The main drawback affecting this kind of micro fabrication process is that such structural superficial details can be damaged when detaching the replica from the mold. Therefore, the present study has focused on the optimization of the HE processes through the development of an analytical model for the prediction of the demolding force as a function of temperature. This model allowed calculating the minimum demoldin…

Nanoscale strain-engineering and optics of quantum emitters in a two-dimensional semiconductor

2017

We present deterministic fabrication of a two-dimensional lattice of quantum emitters in an atomically thin semiconductor. Resonant laser spectroscopy of these emitters reveals localized exciton states that exhibit stable, bright and high-purity single photon emission.