6533b837fe1ef96bd12a25c1
RESEARCH PRODUCT
Nanoscale Etching of GaAs and InP in Acidic H<sub>2</sub>O<sub>2</sub> Solution: A Striking Contrast in Kinetics and Surface Chemistry
Thierry ConardJohan MeersschautSophia ArnautsMikko LaitinenDennis H. Van DorpJohn J. KellyTimo SajavaaraFrank Holsteynssubject
010302 applied physicsReaction mechanismMaterials scienceKinetics02 engineering and technologyContrast (music)021001 nanoscience & nanotechnologyCondensed Matter Physics01 natural sciencesAtomic and Molecular Physics and OpticsChemical engineeringEtching (microfabrication)0103 physical sciencesGeneral Materials Science0210 nano-technologyNanoscopic scaledescription
In this study of nanoscale etching for state-of-the-art device technology the importance of the nature of the surface oxide, is demonstrated for two III-V materials. Etching kinetics for GaAs and InP in acidic solutions of hydrogen peroxide are strikingly different. GaAs etches much faster, while the dependence of the etch rate on the H+ concentration differs markedly for the two semiconductors. Surface analysis techniques provided information on the surface composition after etching: strongly non-stoichiometric porous (hydr)oxides on GaAs and a thin stoichiometric oxide that forms a blocking layer on InP. Reaction schemes are provided that allow one to understand the results, in particular the important difference in etch rate and the contrasting role of chloride in the dissolution of the two semiconductors.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2018-08-01 | Solid State Phenomena |