Results on radiation hardness of black silicon induced junction photodetectors from proton and electron radiation

Abstract The stability of black silicon induced junction photodetectors under high-energy irradiation was tested with 11 MeV protons and 12 MeV electrons using fluence of 1 ⋅ 10 10 protons/cm2 and dose of 67 krad(Si) for protons and electrons, respectively. The energies and dose levels were selected to test radiation levels relevant for space applications. The degradation was evaluated through dark current and external quantum efficiency changes during (within 1 h after each step) and after (some days after) full irradiation sequences. Furthermore, the black silicon photodetectors were compared to planar silicon induced junction and planar silicon pn-junction photodetectors to assess the co…