0000000000255851

AUTHOR

K. K. Andersen

showing 3 related works from this author

Channeling and Radiation of Electrons in Silicon Single Crystals and Si1−xGexCrystalline Undulators

2013

The phenomenon of channeling and the basic features of channeling radiation emission are introduced in a pedestrian way. Both, radiation spectra as well as dechanneling length measurements at electron beam energies between 195 and 855 MeV feature quantum state phenomena for the (110) planar potential of the silicon single crystals. Radiation from a crystalline undulator, produced at the Aarhus University (UAAR), has been investigated at the Mainz Microtron electron accelerator facility MAMI. The 4-period epitaxially grown strained layer Si1−xGex undulator had a period length λu = 9.9 μm. At a beam energy of 375 MeV a broad excess yield around the theoretically expected photon energy of 0.13…

PhysicsHistorySiliconchemistry.chemical_elementParticle acceleratorElectronPhoton energyRadiationUndulatorComputer Science ApplicationsEducationlaw.inventionchemistrylawCathode rayPhysics::Accelerator PhysicsAtomic physicsNuclear ExperimentMicrotronJournal of Physics: Conference Series
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Experimental realization of a new type of crystalline undulator.

2014

A new scheme of making crystalline undulators was recently proposed and investigated theoretically by Andriy Kostyuk, concluding that a new type of crystalline undulator would be not only viable, but better than the previous scheme. This article describes the first experimental measurement of such a crystalline undulator, produced by using Si(1-x)Ge(x)-graded composition and measured at the Mainzer Microtron facility at beam energies of 600 and 855 MeV. We also present theoretical models developed to compare with the experimental data.

OpticsMaterials sciencebusiness.industryTheoretical modelsGeneral Physics and AstronomyType (model theory)UndulatorbusinessMicrotronRealization (systems)Beam (structure)Physical review letters
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Radiation emission at channeling of electrons in a strained layer undulator crystal

2013

Abstract Experiments have been performed at the Mainz Microtron MAMI to explore the radiation emission spectra from a crystalline undulator at electron beam energies of 270 and 855 MeV. The epitaxially grown graded composition strained layer Si 1 - x Ge x undulator had 4-period with a period length λ u = 9.9 μ m . Spectra taken at the beam energy of 270 MeV at channeling in the undulating (110) planes exhibit a broad excess yield around the theoretically expected photon energies of 0.069 MeV, as compared with a flat silicon reference crystal. Model calculations on the basis of synchrotron-like radiation emission from finite single arc elements, taking into account also coherence effects, su…

010302 applied physicsPhysicsNuclear and High Energy PhysicsPhotonSiliconchemistry.chemical_elementElectronUndulator01 natural sciencesSpectral lineCrystalchemistry0103 physical sciencesCathode rayPhysics::Accelerator PhysicsAtomic physicsNuclear Experiment010306 general physicsInstrumentationMicrotronNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
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