6533b826fe1ef96bd1284fb6
RESEARCH PRODUCT
Radiation emission at channeling of electrons in a strained layer undulator crystal
Hartmut BackeJ. Lundsgaard HansenK. K. AndersenWerner LauthD. KrambrichUlrik I. Uggerhøjsubject
010302 applied physicsPhysicsNuclear and High Energy PhysicsPhotonSiliconchemistry.chemical_elementElectronUndulator01 natural sciencesSpectral lineCrystalchemistry0103 physical sciencesCathode rayPhysics::Accelerator PhysicsAtomic physicsNuclear Experiment010306 general physicsInstrumentationMicrotrondescription
Abstract Experiments have been performed at the Mainz Microtron MAMI to explore the radiation emission spectra from a crystalline undulator at electron beam energies of 270 and 855 MeV. The epitaxially grown graded composition strained layer Si 1 - x Ge x undulator had 4-period with a period length λ u = 9.9 μ m . Spectra taken at the beam energy of 270 MeV at channeling in the undulating (110) planes exhibit a broad excess yield around the theoretically expected photon energies of 0.069 MeV, as compared with a flat silicon reference crystal. Model calculations on the basis of synchrotron-like radiation emission from finite single arc elements, taking into account also coherence effects, suggest that evidence for a weak undulator effect has been observed for the first time for electrons.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2013-08-01 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms |