0000000000255885
AUTHOR
M. D. Cubells
Address Event Representation (AER) approach to resistive sensor arrays
Address event representation (AER) has become an excellent strategy when approaching traditional frame based applications, mainly vision sensors. In this paper, and Within this scope, the potential of the AER paradigm is demonstrated when considering resistive (non-vision) sensor arrays. For showing quantitative evidences, MOS AMS 0.35 μm versions of some of the circuit cells typically used in AER systems, such as Winner-Take-All (WTA) circuits, have been implemented and analyzed. In these unit-cells, basic resistance-controlled sources are considered as per sensing devices. Preliminary simulation results demonstrate that this approach is valid for a wide range of resistive sensors.
Magnetic Tunnel Junction (MTJ) Sensors for Integrated Circuits (IC) Electric Current Measurement
We report on MgO Magnetic Tunnel Junction (MTJ) devices focusing on their potential application in the measurement of electrical current at the integrated circuit level. Single devices and full bridges have been specifically developed for this purpose. A sort of different designs regarding their geometry arrangement as well as the number of constitutive elements have been tested. Experimental characterization has been performed and results including impedance and sensitivity measurements are given.
Giant Magnetoresistance (GMR) sensors for 0.35µm CMOS technology sub-mA current sensing
This paper reports on the design and fabrication of microelectronic structures for non-invasive indirect electric current sensing at the IC level. A 0.35 ?m CMOS ASIC has been specifically developed for this purpose. Then, a low temperature post-process, fully compatible with the CMOS technology, has been applied for depositing Giant Magnetoresistive (GMR) sensors. Preliminary experimental results for obtaining the sensitivity of the devices are presented. The detection limit is estimated to be about 5 ?A.
Quasi-digital conversion for resistive devices: application in GMR-based IC current sensors
Resistive devices, including sensors, are used in a huge range of applications within different scenarios. When a complete system is considered, a quasi-digital output is often recommendable. If the conversion is operated at device level, some problems such as noise disturbs, insertion losses and so on, can be reduced. In this work, we describe a resistance-tofrequency (R-f) converter with a suggested application in low current monitoring by means of GiantMagnetoResistance (GMR) sensors. Specific devices have been designed and microfabricated. The system has been tested by means of discrete components with a PCB. The complete microsystem monolithic integration in a standard CMOS technology …