0000000000262459

AUTHOR

Murielle Salomé

showing 3 related works from this author

Electrode–Electrolyte Compatibility in Solid-Oxide Fuel Cells: Investigation of the LSM–LNC Interface with X-ray Microspectroscopy

2015

Ca:LaNbO4 (LNC) constitutes the last real breakthrough in high-temperature proton conductors, with better chemical and mechanical stability with respect to cerate and zirconate perovskites. However, the low amount of bivalent dopant that can be hosted in the LaNbO4 matrix poses a limit to the proton concentration in the electrolyte. Using synchrotron X-ray microspectroscopy, we investigated the compatibility of annealed LNC/LSM electrolyte/cathode bilayers for proton-conducting SOFCs. The element maps are complemented by microEXAFS and microXANES, giving information on the fate of different cations after diffusion. The X-ray microspectroscopy approach described here is applied for the first…

PROTON CONDUCTORScathodeMaterials scienceGeneral Chemical EngineeringX-ray microspectroscopyXRFOxideelectrolyteElectrolytefuel cellchemistry.chemical_compoundMaterials ChemistrySOFCX-rayCompatibility (geochemistry)General Chemistryelectrodelanthanum manganitelanthanum strontium manganiteEXAFSCHEMICAL COMPATIBILITYchemistryChemical engineeringElectrodemicroXRFFuel cellsLNClanthanum niobateChemistry of Materials
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X-ray absorption near-edge structure of GaN with high Mn concentration grown on SiC.

2009

By means of x-ray absorption near-edge structure (XANES) several Ga(1-x)Mn(x)N (0.03x0.09) layers have been analyzed. The Mn-doped GaN samples consisted of different epilayers grown by molecular beam epitaxy on [0001] SiC substrates. The low mismatch between GaN and SiC allows for a good quality and homogeneity of the material. The measurements were performed in fluorescence mode around both the Ga and Mn K edges. All samples studied present a similar Mn ionization state, very close to 2+, and tetrahedral coordination. In order to interpret the near-edge structure, we have performed ab initio calculations using the full potential linear augmented plane wave method as implemented in the Wien…

chemistry.chemical_compoundValence (chemistry)Absorption edgeAbsorption spectroscopyChemistryBand gapAnalytical chemistryGeneral Materials ScienceGallium nitrideCondensed Matter PhysicsSpectroscopyXANESMolecular beam epitaxyJournal of physics. Condensed matter : an Institute of Physics journal
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X-ray absorption near edge spectroscopy at the Mn K-edge in highly homogeneous GaMnN diluted magnetic semiconductors

2006

We have studied by X-ray absorption spectroscopy the local environment of Mn in highly homogeneous Ga 1-x Mn x N (0.06 <x<0.14) thin epilayers grown by molecular beam epitaxy on [0001] SiC substrates. The measurements were performed in fluorescence mode around the Ga and Mn K-edges. In this report, we focus our attention to the X-ray absorption near edge spectroscopy (XANES) results. The comparison of the XANES spectra corresponding to the Ga and Mn edges indicates that Mn is substitutional to Ga in all samples studied. The XANES spectra measured at the Mn absorption edge shows in the near-edge region a double peak and a shoulder below the absorption edge and the main absorption peak after …

Valence (chemistry)Absorption edgeAbsorption spectroscopyK-edgeCondensed matter physicsChemistryAnalytical chemistryMagnetic semiconductorCondensed Matter PhysicsSpectroscopyXANESSpectral lineElectronic Optical and Magnetic Materialsphysica status solidi (b)
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