0000000000278219
AUTHOR
Renaud Péchou
Splitting of surface-related phonons in Raman spectra of self-assembled GaN nanowires
cited By 2; International audience; Micro Raman spectroscopy studies have been performed on GaN nanowires grown by Plasma-Assisted Molecular Beam Epitaxy on Silicon (111) substrate. From the analysis of experimental data, the emergence of a two peaks band located near 700 cm-1 has been attributed to the Raman scattering by surface-related phonons. We have analyzed the surface character of these two modes by changing the dielectric constant of the exterior medium and some experimental parameters. Furthermore, a theoretical model describing the nanowires ensemble by means of an effective dielectric function has been used to interpret the Raman scattering results. Those numerical simulations a…
Splitting of the surface phonon modes in wurtzite nanowires
We analyze the surface optical modes of GaN nanowires (NW) and perform a comparative study with the characteristics expected for other polar NWs. The theoretical analysis of the modes is performed within the context of the effective medium theory that takes into account the dipolar interaction between neighboring NWs (Maxwell-Garnett approximation). It is shown that deviations of the exciting light from the NWs axis, which coincides with the wurtzite c-axis, result in the anticrossing of two distinct surface phonon branches, leading to their splitting in axial and planar components and the appearance of two peaks in the Raman spectra. Additional calculations are performed that determine th…