6533b7d6fe1ef96bd1265e27
RESEARCH PRODUCT
Splitting of surface-related phonons in Raman spectra of self-assembled GaN nanowires
F. DemangeotF. DemangeotAnne PonchetRenaud PéchouRenaud PéchouJunle WangAna CrosBruno Daudinsubject
Experimental parametersRaman scatteringMaterials sciencePhononNanowireGallium nitride02 engineering and technologyDielectricDielectric functions01 natural sciencessymbols.namesakechemistry.chemical_compoundCondensed Matter::Materials ScienceExperimental observation0103 physical sciencesTheoretical models010302 applied physicsSilicon (111) substrates[PHYS]Physics [physics]Condensed matter physicsNanowiresSurface phononGallium nitride021001 nanoscience & nanotechnologyCondensed Matter PhysicschemistryDielectric propertiesRaman spectroscopysymbolsPhononsPlasma-assisted molecular beam epitaxyMicro Raman Spectroscopy0210 nano-technologyRaman spectroscopyMolecular beam epitaxyRaman scatteringSurface phononMolecular beam epitaxydescription
cited By 2; International audience; Micro Raman spectroscopy studies have been performed on GaN nanowires grown by Plasma-Assisted Molecular Beam Epitaxy on Silicon (111) substrate. From the analysis of experimental data, the emergence of a two peaks band located near 700 cm-1 has been attributed to the Raman scattering by surface-related phonons. We have analyzed the surface character of these two modes by changing the dielectric constant of the exterior medium and some experimental parameters. Furthermore, a theoretical model describing the nanowires ensemble by means of an effective dielectric function has been used to interpret the Raman scattering results. Those numerical simulations are in reasonable agreement with experimental observations and suggest that these two peaks resulting from the splitting of surface-related phonon into axial and planar modes can be used as a probe of the dielectric properties of the nanowires environment.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2012-12-21 |