0000000000278220

AUTHOR

Junle Wang

showing 2 related works from this author

Splitting of surface-related phonons in Raman spectra of self-assembled GaN nanowires

2012

cited By 2; International audience; Micro Raman spectroscopy studies have been performed on GaN nanowires grown by Plasma-Assisted Molecular Beam Epitaxy on Silicon (111) substrate. From the analysis of experimental data, the emergence of a two peaks band located near 700 cm-1 has been attributed to the Raman scattering by surface-related phonons. We have analyzed the surface character of these two modes by changing the dielectric constant of the exterior medium and some experimental parameters. Furthermore, a theoretical model describing the nanowires ensemble by means of an effective dielectric function has been used to interpret the Raman scattering results. Those numerical simulations a…

Experimental parametersRaman scatteringMaterials sciencePhononNanowireGallium nitride02 engineering and technologyDielectricDielectric functions01 natural sciencessymbols.namesakechemistry.chemical_compoundCondensed Matter::Materials ScienceExperimental observation0103 physical sciencesTheoretical models010302 applied physicsSilicon (111) substrates[PHYS]Physics [physics]Condensed matter physicsNanowiresSurface phononGallium nitride021001 nanoscience & nanotechnologyCondensed Matter PhysicschemistryDielectric propertiesRaman spectroscopysymbolsPhononsPlasma-assisted molecular beam epitaxyMicro Raman Spectroscopy0210 nano-technologyRaman spectroscopyMolecular beam epitaxyRaman scatteringSurface phononMolecular beam epitaxy
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Resonant Raman scattering of core-shell GaN/AlN nanowires.

2020

Abstract We have analyzed the electron–phonon coupling in GaN/AlN core–shell nanowires by means of Raman scattering excited at various wavelengths in the ultraviolet spectral range (335, 325 and 300 nm) and as a function of the AlN shell thickness. The detailed analysis of the multi-phonon spectra evidences important differences with excitation energy. Under 325 and 300 nm excitation the Raman process is mediated by the allowed A 1(LO) phonon mode, where the atoms vibrate along the NW axis. Considering its selection rules, this mode is easily accessible in backscattering along the wurtzite c axis. Interestingly, for 335 nm excitation the scattering process is instead mediated by the E 1(LO)…

Materials sciencePhononShell (structure)NanowireBioengineering02 engineering and technology010402 general chemistry01 natural sciencesMolecular physics[SPI]Engineering Sciences [physics]symbols.namesakeGeneral Materials ScienceElectrical and Electronic EngineeringWurtzite crystal structure[PHYS]Physics [physics]Mechanical EngineeringGeneral Chemistry021001 nanoscience & nanotechnology0104 chemical sciencesMechanics of MaterialsExcited statesymbols0210 nano-technologyRaman spectroscopyRaman scatteringExcitationNanotechnology
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