0000000000281570
AUTHOR
Ulrich S. Schwarz
Low-temperature exciton absorption in InSe under pressure.
We have investigated the effect of pressure on the lowest direct band-edge exciton of the layered semiconductor InSe by optical-absorption measurements at 10 K and for pressures up to 4 GPa. The Elliott-Toyozawa formalism is used to analyze the line shape of the exciton absorption spectra. In this way we determine the pressure dependence of the lowest direct band gap, the exciton binding energy, and the exciton linewidth. The band gap exhibits a pronounced nonlinear shift with pressure, which is a consequence of the strong anisotropy of intralayer and interlayer bonding. The exciton binding energy decreases with pressure, mainly due to the large increase of the low-frequency dielectric cons…
Weak itinerant ferromagnetism and electronic and crystal structures of alkali-metal iron antimonides: NaFe4Sb12andKFe4Sb12
The synthesis, chemical, structural, and magnetic properties of alkali-metal compounds with filled-skutterudite structure, $\mathrm{Na}{\mathrm{Fe}}_{4}{\mathrm{Sb}}_{12}$ and $\mathrm{K}{\mathrm{Fe}}_{4}{\mathrm{Sb}}_{12}$, are described. X-ray and neutron diffraction and elemental analysis established the crystal structure without defects and disorder on the cation site. The temperature and pressure dependence of the cubic unit cell of $\mathrm{Na}{\mathrm{Fe}}_{4}{\mathrm{Sb}}_{12}$ and the displacement parameter of Na are investigated. The electronic structure is calculated by density functional methods (LMTO, FPLO). Quantum chemical calculations (electron localization function) reveal …
Effect of pressure on the structural properties and electronic band structure of GaSe
The structural properties of GaSe have been investigated up to 38 GPa by monochromatic X-ray diffraction. The onset of the phase transition from the e-GaSe to a disordered NaCi-type structural motif is observed near 21 GPa. Using the experimentally determined lattice parameters of the layered e-phase as input, constrained ab-initio total energy calculations were performed in order to optimize the internal structural parameters at different pressures. The results obtained for the nearest-neighbor Ga-Se distance agree with those derived from recent EXAFS measurements. In addition, information is obtained on the changes of Ga-Ga and Se-Se bond lengths which were not accessible to a direct expe…
Vibrational Properties of InSe under Pressure: Experiment and Theory
The pressure dependence of the phonon modes in the layered semiconductor γ-InSe has been investigated experimentally and theoretically for pressures up to 11 GPa. The mode Gruneisen parameters of all Raman-active zone-center phonons have been determined by Raman scattering under pressure. In addition, features corresponding to second and third-order scattering processes are apparent in the Raman spectra under resonance conditions, from which information about zone-edge modes can be obtained. For the assignment of the observed Raman features to vibrational modes we have calculated the phonon dispersion curves using a rigid-ion model including couplings to first-nearest neighbors and long-ran…