0000000000297328
AUTHOR
Yu. B. Paderno
Ground state properties of SmB6
Abstract We have studied the ground state properties of the intermediate valence narrow-gap semiconductor SmB 6 by means of point-contact (PC) spectroscopy and specific heat measurements. The density of states derived from PC tunneling spectra could be decomposed into two energy-dependent parts with E g =21 meV and E d =4.5 meV wide gaps, and a finite residual density of states at the Fermi level. The specific heat of SmB 6 is enhanced below about 2 K, more pronounced for the sample with less impurities. This behavior can be attributed to the formation of a coherent state within the residual density of states in the energy gap.
Energy gap of intermediate-valentSmB6studied by point-contact spectroscopy
We have investigated the intermediate valence narrow-gap semiconductor ${\mathrm{SmB}}_{6}$ at low temperatures using both conventional spear-anvil type point contacts as well as mechanically controllable break junctions. The zero-bias conductance varied between less than $0.01 \ensuremath{\mu}\mathrm{S}$ and up to 1 mS. The position of the spectral anomalies, which are related to the different activation energies and band gaps of ${\mathrm{SmB}}_{6},$ did not depend on the the contact size. Two different regimes of charge transport could be distinguished: Contacts with large zero-bias conductance are in the diffusive Maxwell regime. They had spectra with only small nonlinearities. Contacts…