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RESEARCH PRODUCT
Ground state properties of SmB6
V. PavlíkYu. B. PadernoMarián ReiffersK. GloosK. GloosE.s. KonovalovaSlavomír GabániKarol FlachbartPeter SamuelyM. Orendáčsubject
Valence (chemistry)Materials scienceCondensed matter physicsBand gapFermi levelCondensed Matter PhysicsHeat capacityElectronic Optical and Magnetic Materialssymbols.namesakesymbolsDensity of statesCoherent statesElectrical and Electronic EngineeringSpectroscopyGround statedescription
Abstract We have studied the ground state properties of the intermediate valence narrow-gap semiconductor SmB 6 by means of point-contact (PC) spectroscopy and specific heat measurements. The density of states derived from PC tunneling spectra could be decomposed into two energy-dependent parts with E g =21 meV and E d =4.5 meV wide gaps, and a finite residual density of states at the Fermi level. The specific heat of SmB 6 is enhanced below about 2 K, more pronounced for the sample with less impurities. This behavior can be attributed to the formation of a coherent state within the residual density of states in the energy gap.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2002-03-01 | Physica B: Condensed Matter |