0000000000304191
AUTHOR
Juan Bautista Roldán
showing 5 related works from this author
Magnetic Tunnel Junction (MTJ) Sensors for Integrated Circuits (IC) Electric Current Measurement
2013
We report on MgO Magnetic Tunnel Junction (MTJ) devices focusing on their potential application in the measurement of electrical current at the integrated circuit level. Single devices and full bridges have been specifically developed for this purpose. A sort of different designs regarding their geometry arrangement as well as the number of constitutive elements have been tested. Experimental characterization has been performed and results including impedance and sensitivity measurements are given.
A DC behavioral electrical model for quasi-linear spin-valve devices including thermal effects for circuit simulation
2011
An advanced model for quasi-linear spin-valve (SV) structures is presented for circuit simulation purposes. The model takes into account electrical and thermal effects in a coupled way in order to allow a coherent representation of the sensor physics for design purposes of electronics applications based on these sensor devices. The model was implemented in Verilog-A and used in a commercial circuit simulator. For testing the model, different SV structures have been specifically fabricated and measured. The characterization included DC measurements as well as steady-state and transient thermal analysis. From the experimental data, the parameters of the model have been extracted. The model re…
Analytical compact modeling of GMR based current sensors: Application to power measurement at the IC level
2010
An analytical compact model for giant magnetoresistance (GMR) based current sensors has been developed. Different spin-valve based full Wheatstone bridge sensors, with the current straps integrated in the chip, have been considered. These devices have been experimentally characterized in order to extract the model parameters. In this respect, we have focused on the sensors linear operation regime. The model, which allows the individual description of the magnetoresistive elements, has been implemented in a circuit simulator by means of a behavioral description language: Verilog-A. We also propose the use of the devices in a direct power measurement application at the integrated circuit (IC)…
Quasi-static magnetoresistive sensor modeling for current-time conversion circuit applications
2011
In this paper we report a current-to-time converter (CTC) suitable for current sensor monitoring in low power applications. Based on a discrete resistence-to-frequency converter and a Giant MagnetoResistance (GMR) current sensor. Simulations have been done using a quasi-static electrical Verilog-A model for the GMR current sensor. A reduced set of parameters has been extracted to characterize the GMR sensor's behavior. The application has been analyzed making use of different sensors, whose device parameters were previously extracted. Finally, the accuracy of the models has been tested by comparing with experimental transient measurements.
Stochastic resonance in a metal-oxide memristive device
2021
Abstract The stochastic resonance phenomenon has been studied experimentally and theoretically for a state-of-art metal-oxide memristive device based on yttria-stabilized zirconium dioxide and tantalum pentoxide, which exhibits bipolar filamentary resistive switching of anionic type. The effect of white Gaussian noise superimposed on the sub-threshold sinusoidal driving signal is analyzed through the time series statistics of the resistive switching parameters, the spectral response to a periodic perturbation and the signal-to-noise ratio at the output of the nonlinear system. The stabilized resistive switching and the increased memristance response are revealed in the observed regularities…