0000000000306534

AUTHOR

D. Pupillo

showing 2 related works from this author

Effect of E. coli biofilm formation and removal on passive films on AISI 316L during fermentation processes

2021

Abstract 316L coupons were sanitized in hot water vapour inducing iron enrichment in passive films. Coupons were then immersed in a pilot fed-batch fermenter in presence of E. coli. Sanitization causes iron enrichment in passive films. Fermentation causes the growth of biofilm on the SS, constituted by bacteria embedded in an extracellular polymeric substance. During fermentation SS open circuit potential is very negative due to low oxygen concentration on its surface, while the chelating action of siderophores induces chromium enrichment in the passive film. Disinfection in NaClO for 30 min allows removal of biofilm and formation of a protective passive film.

SiderophorebiologyChemistry020209 energyGeneral Chemical EngineeringBiofilmchemistry.chemical_elementIndustrial fermentation02 engineering and technologyGeneral Chemistry021001 nanoscience & nanotechnologybiology.organism_classificationAISI 316L Biofilm Disinfection Fermentation Passive film SanitizationCorrosionChromiumExtracellular polymeric substanceSettore ING-IND/23 - Chimica Fisica ApplicataChemical engineering0202 electrical engineering electronic engineering information engineeringGeneral Materials ScienceFermentation0210 nano-technologyBacteria
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The Effect of Electronic Properties of Anodized and Hard Anodized Ti and Ti6Al4V on Their Reactivity in Simulated Body Fluid

2022

The electronic properties of barrier and porous layers on Ti and Ti6Al4V were studied. Barrier anodic oxides grown to 40 V on Ti and on Ti6Al4V are both n-type semiconductors with a band gap of 3.3 eV and 3.4 eV respectively, in agreement with the formation of amorphous TiO2. Anodizing to 200 V at 20 mA cm−2 in calcium acetate and β-glycerol phosphate disodium pentahydrate leads to the formation of Ca and P containing porous films with a photoelectrochemical behaviour dependent on the metallic substrate. A band gap of 3.2 eV and the flat band potential of −0.5 V vs Ag/AgCl were measured for the porous oxide on Ti, while optical transitions at 2.15 eV and a significantly more positive flat b…

Aluminum alloyAnodic oxidationPorous layerGlycerol phosphateAnodizingFlat-band potentialBarrier layerOxide surface layerMaterials ChemistryElectrochemistryPentahydrateOxide surface layer Electrochemical Measurments AnodizingTernary alloyN-type semiconductorPorous oxideRenewable Energy Sustainability and the EnvironmentVanadium alloys Anodic oxideSimulated body fluids Electronic propertiesCondensed Matter PhysicsSurfaces Coatings and FilmsElectronic Optical and Magnetic MaterialsEnergy gapSettore ING-IND/23 - Chimica Fisica ApplicataElectrochemical MeasurmentsTitanium dioxideTitanium alloyBody fluidSubstrateCalcium acetate
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