0000000000311457
AUTHOR
Ch. Schwan
showing 5 related works from this author
Preparation, Characterisation and Dielectric Properties of YBa2Cu3O7-δ/ Insulator-Heterostructures
1996
YBa 2 Cu 3 O 7-δ /insulator/Au-heterostructures on SrTiO 3 or LaAlO 3 substrates were prepared to study the properties of the materials SrTiO 3 , BaTiO 3 and Ceo 2 . X-ray diffraction measurements in Bragg-Brentano geometry show c-axis-oriented growth for the superconductor and the insulators SrTiO 3 and CeO 2 . Typical values for the rocking curve width of the different insulating films are between 0.4° and 0.8°. The highest breakdown fields are measured for the insulator SrTiO 3 with +37.5 kV/mm and -8.8 kV/mm. The permittivity for CeO 2 is independent of applied field and only weakly temperature dependent. This is in contrast to the perovskite type insulators, where the permittivity depe…
Ferroelectricity and structure of BaTiO grown on YBa Cu O thin films
2000
We have investigated the crystal structure and the ferroelectric properties of BaTiO3 thin films with YBa2Cu3O \(_{7 - \delta }\) as the bottom and Au as the top electrode. Epitaxial heterostructures of YBa2Cu3O \(_{7 - \delta }\) and BaTiO3 were prepared by dc and rf sputtering, respectively. The crystal structure of the films was characterised by X-ray diffraction. The ferroelectric behaviour of the BaTiO3 films was confirmed by hysteresis loop measurements using a Sawyer Tower circuit. We obtain a coercive field of 30 kV/cm and a remanent polarisation of 1.25 μC/cm2. At sub-switching fields the capacitance of the films obeys a relation analogous to the Rayleigh law. This behaviour indica…
Ferroelectric Properties and Crystal Structure of YBa2Cu3O7/BaxSr(1−x)TiO3 Heterostructures
1997
ABSTRACTEpitaxial YBa2Cu3O7/Ba0.5Sr0.5TiO3 (YBCO/BST) and YBCO/BaTiO3 (BTO) heterostructures were prepared by dc and rf sputtering on SrTiO3 and MgO substrates. The YBCO/BTO bilayers exhibit an inductive superconducting transition temperature of 85 K and the ferroelectric phase transition of BST shows a Curie-Weiss temperature of 310 K. Microstructure was investigated by x-ray-diffraction and atomic force microscopy. In this work we also studied the insulator's conductivity and the contribution of domain walls to permittivity.
Josephson junctions and superconducting field effect transistors based on epitaxial Bi2Sr2Can-1CunO2(n+2) thin films
1998
Abstract Josephson junctions based on thin films of the Bi2Sr2Ca2Cu3O10+δ compound show IcRn products compatible with YBa2Cu3O7−δ samples. Using quasiparticle tunneling experiments we found evidence for a superconductor–insulator–superconductor tunneling process via localized states in the barrier. The Bi2Sr2CaCu2O8+δ compound is investigated regarding possible applications in superconducting field effect devices. We present thin films of four unit cells thickness that are superconducting at 58 K. An inverted metal–insulator–superconductor structure was prepared. From the modulation of the normal state resistance we estimate a carrier density of 7×1019 cm−3 for a superconducting sample. The…
Patterning of Suitable Structures for the Investigation of the Josephson Effect in YBa2Cu3O7/PrBa2Cu3O7 Superlattices
1996
The aim of our work is to investigate the Josephson effect in YBa 2 Cu 3 O 7-δ /PrBa 2 Cu 3 O 7-δ superlattices. In the case of current flow along c axis direction the superlattice forms an array of artificial Josephson junctions where the YBa 2 Cu 3 O 7-δ layers are the superconducting electrodes which are separated but Josephson coupled by the PrBa 2 Cu 3 O 7-δ sheets. In this paper we report on the preparation, characterisation and patterning of the superlattices into suitable structures via standard photolithograpy and lift-off technique.