0000000000312349

AUTHOR

S. G. Altendorf

showing 1 related works from this author

Facet-Independent Electric-Field-Induced Volume Metallization of Tungsten Trioxide Films.

2015

Reversible metallization of band and Mott insulators by ionic-liquid gating is accompanied by significant structural changes. A change in conductivity of seven orders of magnitude at room temperature is found in epitaxial films of WO3 with an associated monoclinic-to-cubic structural reorganization. The migration of oxygen ions along open volume channels is the underlying mechanism.

Materials scienceOrders of magnitude (temperature)Inorganic chemistry02 engineering and technologyGatingConductivityEpitaxy01 natural sciencesCondensed Matter::Materials Sciencechemistry.chemical_compoundElectric field0103 physical sciencesGeneral Materials Scienceskin and connective tissue diseases010306 general physicsCondensed matter physicsMechanical EngineeringMott insulator021001 nanoscience & nanotechnologyTungsten trioxideVolume (thermodynamics)chemistryMechanics of MaterialsCondensed Matter::Strongly Correlated Electronssense organs0210 nano-technologyAdvanced materials (Deerfield Beach, Fla.)
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