6533b7d8fe1ef96bd1269a9a

RESEARCH PRODUCT

Facet-Independent Electric-Field-Induced Volume Metallization of Tungsten Trioxide Films.

Mahesh G. SamantS. G. AltendorfS. G. AltendorfNagaphani AetukuriDonata PassarelloDonata PassarelloDonata PassarelloStuart S. P. ParkinStuart S. P. ParkinJaewoo Jeong

subject

Materials scienceOrders of magnitude (temperature)Inorganic chemistry02 engineering and technologyGatingConductivityEpitaxy01 natural sciencesCondensed Matter::Materials Sciencechemistry.chemical_compoundElectric field0103 physical sciencesGeneral Materials Scienceskin and connective tissue diseases010306 general physicsCondensed matter physicsMechanical EngineeringMott insulator021001 nanoscience & nanotechnologyTungsten trioxideVolume (thermodynamics)chemistryMechanics of MaterialsCondensed Matter::Strongly Correlated Electronssense organs0210 nano-technology

description

Reversible metallization of band and Mott insulators by ionic-liquid gating is accompanied by significant structural changes. A change in conductivity of seven orders of magnitude at room temperature is found in epitaxial films of WO3 with an associated monoclinic-to-cubic structural reorganization. The migration of oxygen ions along open volume channels is the underlying mechanism.

yearjournalcountryeditionlanguage
2015-11-13Advanced materials (Deerfield Beach, Fla.)
10.1002/adma.201505631https://pubmed.ncbi.nlm.nih.gov/27159503