0000000000326458

AUTHOR

C.a

showing 2 related works from this author

Smart High-κ Nanodielectrics Using Solid Supported Polyoxometalate-Rich Nanostructures

2011

Utilizing Langmuir-Blodgett deposition and scanning probe microscopy, we have investigated the extent to which cations alter the self-assembly processes of hybrid polyoxometalates (POMs) on surfaces. The well-defined 2D hexagonal nanostructures obtained were extensively characterized and their properties were studied, and this has revealed fascinating dielectric behavior and reversible capacitive properties. The nanostructures are extremely stable under ambient conditions, and yet exhibit fascinating self-patterning upon heating. These findings present POMs as effective smart nanodielectrics and open up a new field for future POM applications. (c) 2011 American Chemical Society.

Materials scienceNanostructureMacromolecular SubstancesSurface PropertiesMolecular ConformationGeneral Physics and AstronomyNanotechnologyDielectricsurfacesSmart materialScanning probe microscopyMaterials TestingElectric ImpedanceIntelligent materialsGeneral Materials ScienceParticle SizeCation exchangesDielectric behaviorPolyoxometalateHexagonal crystal systemPolyoxometalatesGeneral EngineeringOxidesself-assemblyTungsten CompoundsSelf assemblyNanodielectricsNanostructuresHigh-κ NanodielectricSelf assembly processScanning probe microscopyLangmuir-Blodgett depositionPositive ionsPolyoxometalateSelf-assembly2D-hexagonalAmbient conditions
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Residual crystalline silicon phase in silicon-rich-oxide films subjected to high temperature annealing

2002

Structural properties of silicon rich oxide films (SRO) have been investigated by means of micro-Raman spectroscopy and transmission electron microscopy (TEM). The layers were deposited by plasma enhanced chemical vapor deposition using different SiH4/O2 gas mixtures. The Raman spectra of the as-deposited SRO films are dominated by a broad band in the region 400-500 cm-1 typical of a highly disordered silicon network. After annealing at temperatures above 1000°C in N2, the formation of silicon nanocrystals is observed both in the Raman spectra and in the TEM images. However, most of the precipitated silicon does not crystallize and assumes an amorphous microstructure. © 2002 The Electrochem…

Materials scienceSiliconNanocrystal RamanAnnealing (metallurgy)Analytical chemistrychemistry.chemical_elementMineralogySurfaces Coatings and FilmSettore ING-INF/01 - ElettronicaSettore FIS/03 - Fisica Della Materiasymbols.namesakePlasma-enhanced chemical vapor depositionMaterials ChemistryElectrochemistryCrystalline siliconRAMAN-SPECTROSCOPY; MICROCRYSTALLINE SILICON; THIN-FILMS; SCATTERING; SPECTRA; SUPERLATTICES; NANOCRYSTALS; SIO2-FILMS; SIZERenewable Energy Sustainability and the EnvironmentNanocrystalline siliconSurfaces and InterfacesCondensed Matter PhysicsCrystallographic defectSurfaces Coatings and FilmsElectronic Optical and Magnetic MaterialsAmorphous solidchemistrysymbolsRaman spectroscopy
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