0000000000330649

AUTHOR

Dale Brewe

showing 2 related works from this author

Tuning the Photoresponse of Nano‐Heterojunction: Pressure‐Induced Inverse Photoconductance in Functionalized WO 3 Nanocuboids

2019

S.R. and S.S. contributed equally to this work. This work was mainly supported by the Natural Science Foundation of China (Grant No. 11874076), National Science Associated Funding (NSAF, Grant No. U1530402), and Science Challenging Program (Grant No. TZ2016001). D.E. thanks the financial support from Spanish MINECO under Grant No. MAT2016-75586-C4-1-P and from Generalitat Valenciana under Grant Prometeo/2018/123, EFIMAT. The X-ray diffraction measurements were performed at the BL15U1 station, Shanghai Synchrotron Radiation Facility (SSRF) in China. The HP XAS measurements were performed at 20 ID-C, APS, ANL. APS is supported by DOE-BES, under contract no. DE-AC02-06CH11357. The authors grat…

decompressionPhase transitionMaterials scienceBand gapGeneral Chemical Engineeringinverse photoconductivityGeneral Physics and AstronomyMedicine (miscellaneous)02 engineering and technology010402 general chemistryPolaron01 natural sciencesBiochemistry Genetics and Molecular Biology (miscellaneous)Electrical resistivity and conductivityNano-:NATURAL SCIENCES:Physics [Research Subject Categories]General Materials Sciencelcsh:Sciencepolaronsnano‐heterojunctionsbusiness.industryPhotoconductivityGeneral EngineeringHeterojunctionnano-heterojunctions021001 nanoscience & nanotechnologycompression0104 chemical sciencesphase transitionOptoelectronicslcsh:QCharge carrier0210 nano-technologybusinesscharge carriersAdvanced Science
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Single-Event Effects in the Peripheral Circuitry of a Commercial Ferroelectric Random Access Memory

2018

International audience; This paper identifies the failure modes of a commercial 130-nm ferroelectric random access memory. The devices were irradiated with heavy-ion and pulsed focused X-ray beams. Various failure modes are observed, which generate characteristic error patterns, affecting isolated bits, words, groups of pages, and sometimes entire regions of the memory array. The underlying mechanisms are discussed.

Nuclear and High Energy PhysicsComputer sciencekäyttömuistit02 engineering and technologysingle-event effect01 natural sciencesMemory arrayElectronic mailX-ray0103 physical sciencesElectronic engineering[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/MicroelectronicsElectrical and Electronic Engineeringstatic testComputingMilieux_MISCELLANEOUSdynamic testEvent (probability theory)Random access memoryta114ta213010308 nuclear & particles physicsbusiness.industrySEFImuistit (tietotekniikka)021001 nanoscience & nanotechnologyFerroelectricityheavy ionsingle-event upsetNon-volatile memoryFRAMsäteilyfysiikkaNuclear Energy and EngineeringSingle event upsetPhotonics0210 nano-technologybusinessIEEE Transactions on Nuclear Science
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