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RESEARCH PRODUCT
Single-Event Effects in the Peripheral Circuitry of a Commercial Ferroelectric Random Access Memory
Veronique Ferlet-cavroisViyas GuptaHeikki KettunenGeorgios TsiligiannisThierry GilLuigi DililloFrédéric WrobelAri VirtanenHelmut PuchnerAlexandre Louis BosserDale BreweFrédéric SaignéStephen LalumondiereArto Javanainensubject
Nuclear and High Energy PhysicsComputer sciencekäyttömuistit02 engineering and technologysingle-event effect01 natural sciencesMemory arrayElectronic mailX-ray0103 physical sciencesElectronic engineering[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/MicroelectronicsElectrical and Electronic Engineeringstatic testComputingMilieux_MISCELLANEOUSdynamic testEvent (probability theory)Random access memoryta114ta213010308 nuclear & particles physicsbusiness.industrySEFImuistit (tietotekniikka)021001 nanoscience & nanotechnologyFerroelectricityheavy ionsingle-event upsetNon-volatile memoryFRAMsäteilyfysiikkaNuclear Energy and EngineeringSingle event upsetPhotonics0210 nano-technologybusinessdescription
International audience; This paper identifies the failure modes of a commercial 130-nm ferroelectric random access memory. The devices were irradiated with heavy-ion and pulsed focused X-ray beams. Various failure modes are observed, which generate characteristic error patterns, affecting isolated bits, words, groups of pages, and sometimes entire regions of the memory array. The underlying mechanisms are discussed.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2018-08-01 | IEEE Transactions on Nuclear Science |