Search results for "säteilyfysiikka"
showing 10 items of 55 documents
Mechanisms of Electron-Induced Single-Event Upsets in Medical and Experimental Linacs
2018
In this paper, we perform an in-depth analysis of the single-event effects observed during testing at medical electron linacs and an experimental high-energy electron linac. For electron irradiations, the medical linacs are most commonly used due to their availability and flexibility. Whereas previous efforts were made to characterize the cross sections at higher energies, where the nuclear interaction cross section is higher, the focus of this paper is on the complete overview of relevant electron energies. Irradiations at an electron linac were made with two different devices, with a large difference in feature size. The irradiations at an experimental linac were performed with varying en…
Low-Power, Subthreshold Reference Circuits for the Space Environment : Evaluated with -rays, X-rays, Protons and Heavy Ions
2019
The radiation tolerance of subthreshold reference circuits for space microelectronics is presented. The assessment is supported by measured results of total ionization dose and single event transient radiation-induced effects under &gamma
New exotic beams from the SPIRAL 1 upgrade
2018
Since 2001, the SPIRAL 1 facility has been one of the pioneering facilities in ISOL techniques for reaccelerating radioactive ion beams: the fragmentation of the heavy ion beams of GANIL on graphite targets and subsequent ionization in the Nanogan ECR ion source has permitted to deliver beams of gaseous elements (He, N, O, F, Ne, Ar, Kr) to numerous experiments. Thanks to the CIME cyclotron, energies up to 20 AMeV could be obtained. In 2014, the facility was stopped to undertake a major upgrade, with the aim to extend the production capabilities of SPIRAL 1 to a number of new elements. This upgrade, which is presently under commissioning, consists in the integration of an ECR booster in the…
Investigating the Impact of Radiation-Induced Soft Errors on the Reliability of Approximate Computing Systems
2020
International audience; Approximate Computing (AxC) is a well-known paradigm able to reduce the computational and power overheads of a multitude of applications, at the cost of a decreased accuracy. Convolutional Neural Networks (CNNs) have proven to be particularly suited for AxC because of their inherent resilience to errors. However, the implementation of AxC techniques may affect the intrinsic resilience of the application to errors induced by Single Events in a harsh environment. This work introduces an experimental study of the impact of neutron irradiation on approximate computing techniques applied on the data representation of a CNN.
In-Operando Lithium-Ion Transport Tracking in an All-Solid-State Battery.
2022
An all-solid-state battery is a secondary battery that is charged and discharged by the transport of lithium ions between positive and negative electrodes. To fully realize the significant benefits of this battery technology, for example, higher energy densities, faster charging times, and safer operation, it is essential to understand how lithium ions are transported and distributed in the battery during operation. However, as the third lightest element, methods for quantitatively analyzing lithium during operation of an all-solid-state device are limited such that real-time tracking of lithium transport has not yet been demonstrated. Here, the authors report that the transport of lithium …
Hidden and self-excited attractors in radiophysical and biophysical models
2017
One of the central tasks of investigation of dynamical systems is the problem of analysis of the steady (limiting) behavior of the system after the completion of transient processes, i.e., the problem of localization and analysis of attractors (bounded sets of states of the system to which the system tends after transient processes from close initial states). Transition of the system with initial conditions from the vicinity of stationary state to an attractor corresponds to the case of a self-excited attractor. However, there exist attractors of another type: hidden attractors are attractors with the basin of attraction which does not have intersection with a small neighborhoods of any equ…
Neutron-Induced Effects on a Self-Refresh DRAM
2022
International audience; The field of radiation effects in electronics research includes unknowns for every new device, node size, and technical development. In this study, static and dynamic test methods were used to define the response of a self-refresh DRAM under neutron irradiation. The neutron-induced effects were investigated and characterised by event cross sections, soft-error rate, and bitmaps evaluations, leading to an identification of permanent and temporary stuck cells, single-bit upsets, and block errors. Block errors were identified in different patterns with dependency in the addressing order, leading to up to two thousand faulty words per event, representing a real threat fr…
Improved stability of black silicon detectors using aluminum oxide surface passivation
2021
Publisher Copyright: © 2021 ESA and CNES We have studied how high-energy electron irradiation (12 MeV, total dose 66 krad(Si)) and long term humidity exposure (75%, 75 °C, 500 hours) influence the induced junction black silicon or planar photodiode characteristics. In our case, the induced junction is formed using n-type silicon and atomic-layer deposited aluminum oxide (Al2O3), which contains a large negative fixed charge. We compare the results with corresponding planar pn-junction detectors passivated with either with silicon dioxide (SiO2) or Al2O3. The results show that the induced junction detectors remain stable as their responsivity remains nearly unaffected during the electron beam…
Heavy-ion induced single event effects and latent damages in SiC power MOSFETs
2022
The advantages of silicon carbide (SiC) power MOSFETs make this technology attractive for space, avionics and high-energy accelerator applications. However, the current commercial technologies are still susceptible to Single Event Effects (SEEs) and latent damages induced by the radiation environment. Two types of latent damage were experimentally observed in commercial SiC power MOSFETs exposed to heavy-ions. One is observed at bias voltages just below the degradation onset and it involves the gate oxide. The other damage type is observed at bias voltages below the Single Event Burnout (SEB) limit, and it is attributed to alterations of the SiC crystal-lattice. Focused ion beam (FIB) and s…
Failure Estimates for SiC Power MOSFETs in Space Electronics
2018
Silicon carbide (SiC) power metal-oxide-semiconductor field effect transistors (MOSFETs) are space-ready in terms of typical reliability measures. However, single event burnout (SEB) due to heavy-ion irradiation often occurs at voltages 50% or lower than specified breakdown. Failure rates in space are estimated for burnout of 1200 V devices based on the experimental data for burnout and the expected heavy-ion linear energy transfer (LET) spectrum in space. peerReviewed