6533b827fe1ef96bd128654a

RESEARCH PRODUCT

Failure Estimates for SiC Power MOSFETs in Space Electronics

Ronald D. SchrimpfArthur F. WitulskiJean-marie LauensteinArto JavanainenBrian D. SierawskiRobert A. ReedAndrew L. SternbergKenneth F. GallowayDennis R. Ball

subject

Materials sciencesingle-event burnoutlcsh:Motor vehicles. Aeronautics. AstronauticsAerospace EngineeringBurnoutpower MOSFETs01 natural scienceschemistry.chemical_compoundReliability (semiconductor)silicon carbide0103 physical sciencesSilicon carbidePower semiconductor devicePower MOSFETheavy ionsavaruustekniikka010302 applied physicspower devicesreliabilityta114ta213010308 nuclear & particles physicsfailure ratessingle event effectsEngineering physicsPower (physics)säteilyfysiikkachemistrytransistoritField-effect transistorlcsh:TL1-4050Voltage

description

Silicon carbide (SiC) power metal-oxide-semiconductor field effect transistors (MOSFETs) are space-ready in terms of typical reliability measures. However, single event burnout (SEB) due to heavy-ion irradiation often occurs at voltages 50% or lower than specified breakdown. Failure rates in space are estimated for burnout of 1200 V devices based on the experimental data for burnout and the expected heavy-ion linear energy transfer (LET) spectrum in space. peerReviewed

yearjournalcountryeditionlanguage
2018-06-22Aerospace
10.3390/aerospace5030067http://www.mdpi.com/2226-4310/5/3/67