0000000000337635

AUTHOR

Jialei Wang

0000-0001-6156-0333

showing 3 related works from this author

Assessment of Proton Direct Ionization for the Radiation Hardness Assurance of Deep Submicron SRAMs Used in Space Applications

2021

Proton direct ionization from low-energy protons has been shown to have a potentially significant impact on the accuracy of prediction methods used to calculate the upset rates of memory devices in space applications for state-of-the-art deep sub-micron technologies. The general approach nowadays is to consider a safety margin to apply over the upset rate computed from high-energy proton and heavy ion experimental data. The data reported here present a challenge to this approach. Different upset rate prediction methods are used and compared in order to establish the impact of proton direct ionization on the total upset rate. No matter the method employed the findings suggest that proton dir…

Nuclear and High Energy PhysicsprotonitmikroelektroniikkaProtonkäyttömuistitSpace (mathematics)01 natural sciencesSpace explorationUpset010305 fluids & plasmasMargin (machine learning)Ionization0103 physical sciencesElectrical and Electronic EngineeringDetectors and Experimental TechniquesRadiation hardeningavaruustekniikkaPhysics010308 nuclear & particles physicsionisoiva säteilymuistit (tietotekniikka)Computational physicsCharacterization (materials science)Nuclear Energy and Engineeringsäteilyfysiikka13. Climate action
researchProduct

SEU characterization of commercial and custom-designed SRAMs based on 90 nm technology and below

2020

International audience; The R2E project at CERN has tested a few commercial SRAMs and a custom-designed SRAM, whose data are complementary to various scientific publications. The experimental data include low- and high-energy protons, heavy ions, thermal, intermediate- and high-energy neutrons, high-energy electrons and high-energy pions.

high-energy protonsCOTS[PHYS.PHYS.PHYS-ACC-PH]Physics [physics]/Physics [physics]/Accelerator Physics [physics.acc-ph]käyttömuistitNuclear TheoryElectronHardware_PERFORMANCEANDRELIABILITY01 natural sciences7. Clean energyIonelektroniikkakomponentitNuclear physicsCross section (physics)Pion0103 physical sciencesNeutronionisoimaton säteilyStatic random-access memory010306 general physicsheavy ionsNuclear Experimentlow-energy protonsPhysicsLarge Hadron Collidercross section010308 nuclear & particles physicsionisoiva säteilyelectronsneutronsmuistit (tietotekniikka)SRAMCharacterization (materials science)säteilyfysiikkapionsSEU
researchProduct

Proton Direct Ionization Upsets at Tens of MeV

2023

Experimental monoenergetic proton single-event upset (SEU) cross sections of a 65-nm low core-voltage static random access memory (SRAM) were found to be exceptionally high not only at low energies ($ 3 MeV and extending up to tens of MeV. The SEU cross Section from 20-MeV protons exceeds the 200-MeV proton SEU cross Section by almost a factor of 3. Similarly, monoenergetic neutron cross sections at 14 MeV are about a factor of 3 lower than the 20-MeV proton cross section. Because of Monte Carlo (MC) simulations, it was determined that this strong enhancement is due to the proton direct ionization process as opposed to the elastic and inelastic scattering processes that dominate the SEU res…

Nuclear and High Energy Physicsprotonitprotonsionitionisoiva säteilyscatteringneutronsenergiansiirtoMonte-Carlo simulationsneutronitmuistit (tietotekniikka)proton direct ionizationMonte Carlo -menetelmätNuclear Energy and Engineeringrandom access memorytrajectorydelta-raysNuclear Physics - Experimentsingle event upsetsElectrical and Electronic Engineeringliike-energia
researchProduct