0000000000337716

AUTHOR

A. Paccagnella

showing 5 related works from this author

Direct evidence of secondary recoiled nuclei from high energy protons

2008

The production of secondary recoiled particles from interactions between high energy protons and microelectronics devices was investigated. By using NAND Flash memories, we were able to directly obtain analog information on recoil characteristics. While our results qualitatively confirm the role of nuclear reactions, in particular of those with tungsten, a quantitative model based on Monte Carlo and device-level simulations cannot describe the observed results in terms of recoils from proton-W reactions. © 2006 IEEE.

PhysicsNuclear reactionNuclear and High Energy Physicsbusiness.industryDirect evidencePhysics::Instrumentation and DetectorsMonte Carlo methodNAND gatechemistry.chemical_elementHigh energy protonsSingle event effectsTungstenFlash memorySpace radiationNuclear physicsRecoilNuclear Energy and EngineeringchemistryFloating gate memoriesMicroelectronicsElectrical and Electronic EngineeringAtomic physicsbusinessNuclear Experiment
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Treatment of advanced non-small cell lung cancer: chemotherapy with or without cisplatin?

2006

Pathologymedicine.medical_specialtyLung Neoplasmsmedicine.medical_treatmentPlatinum Compounds.Medical OncologyCarboplatinchemistry.chemical_compoundCarcinoma Non-Small-Cell LungAntineoplastic Combined Chemotherapy ProtocolsmedicineCarcinomaHumansLung cancerNeoplasm StagingCisplatinChemotherapybusiness.industryRespiratory diseasePlatinum compoundsHematologyPrognosismedicine.diseaseCarboplatinOncologychemistryCancer researchNon small cellCisplatinbusinessmedicine.drug
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Association of kidney disease measures with risk of renal function worsening in patients with type 1 diabetes

2018

Background Albuminuria has been classically considered a marker of kidney damage progression in diabetic patients and it is routinely assessed to monitor kidney function. However, the role of a mild GFR reduction on the development of stage ≥3 CKD has been less explored in type 1 diabetes mellitus (T1DM) patients. Aim of the present study was to evaluate the prognostic role of kidney disease measures, namely albuminuria and reduced GFR, on the development of stage ≥3 CKD in a large cohort of patients affected by T1DM. Methods A total of 4284 patients affected by T1DM followed-up at 76 diabetes centers participating to the Italian Association of Clinical Diabetologists (Associazione Medici D…

AdultMaleNephrologymedicine.medical_specialtyendocrine system diseasesRenal function030209 endocrinology & metabolism030204 cardiovascular system & hematologylcsh:RC870-923Kidneyurologic and male genital diseasesGFR03 medical and health sciences0302 clinical medicineRisk FactorsInternal medicineDiabetes mellitusmedicineHumansAlbuminuriaDiabetic kidney diseaseKidneyType 1 diabetesurogenital systembusiness.industryIncidence (epidemiology)Middle Agedlcsh:Diseases of the genitourinary system. Urologymedicine.diseasefemale genital diseases and pregnancy complicationsAlbuminuria Diabetic kidney disease GFR NephrologyDiabetes Mellitus Type 1medicine.anatomical_structureItalyNephrologyDisease ProgressionAlbuminuriaFemalemedicine.symptombusinessResearch ArticleFollow-Up StudiesGlomerular Filtration RateKidney disease
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Single Event Transients and Pulse Quenching Effects in Bandgap Reference Topologies for Space Applications

2016

An architectural performance comparison of bandgap voltage reference variants, designed in a $0.18~\mu \text {m}$ CMOS process, is performed with respect to single event transients. These are commonly induced in microelectronics in the space radiation environment. Heavy ion tests (Silicon, Krypton, Xenon) are used to explore the analog single-event transients and have revealed pulse quenching mechanisms in analogue circuits. The different topologies are compared, in terms of cross-section, pulse duration and pulse amplitude. The measured results, and the explanations behind the findings, reveal important guidelines for designing analog integrated circuits, which are intended for space appli…

mikroelektroniikkaNuclear and High Energy PhysicsBandgap voltage referencecircuit topologysingle-event transient (SET)Integrated circuit01 natural scienceslaw.inventionsingle event transientsCurrent mirrorlawpulse quenchingsingle-event effects (SEE)ionizationradiation hardening by design (RHBD)0103 physical sciencesElectronic engineeringMicroelectronicsAnalog single-event transient (ASET); bandgap voltage reference (BGR); charge sharing; CMOS analog integrated circuits; heavy ion; ionization; parasitic bipolar effect; pulse quenching; radiation effects; radiation hardening by design (RHBD); reference circuits; single-event effects (SEE); single-event transient (SET); space electronics; Voltage reference; Nuclear and High Energy Physics; Nuclear Energy and Engineering; Electrical and Electronic EngineeringAnalog single-event transient (ASET)Electrical and Electronic Engineeringparasitic bipolar effectreference voltage010302 applied physicsPhysicsbandgap voltage reference (BGR)charge sharingta114ta213010308 nuclear & particles physicsbusiness.industryanalog integrated circuitsTransistorspace electronicsPulse durationheavy ionPulse (physics)Voltage referenceNuclear Energy and EngineeringPulse-amplitude modulationreference circuitsmicroelectronicsradiation effectsspace applicationsOptoelectronicsbusinessCMOS analog integrated circuitsIEEE Transactions on Nuclear Science
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A subthreshold, low-power, RHBD reference circuit, for earth observation and communication satellites

2015

A low-power, wide temperature range, radiation tolerant CMOS voltage reference is presented. The proposed reference circuit exhibits a voltage deviation of 0.8mV for 3-MeV protons total ionization dose of 2Mrad and a voltage deviation of 3.8mV for 10-keV X-rays total ionization dose of 4Mrad while being biased at the nominal supply voltage of 0.75V during X-ray irradiation. In addition, the circuit consumes only 4μW and exhibits a measured Temperature Drift of 15ppm/°C for a temperature range of 190°C (−60°C to 130°C) at the supply voltage of 0.75V. It utilizes only CMOS transistors, operating in the subthreshold regime, and poly-silicon resistors without using any diodes or external compon…

Materials scienceta213voltage referencesBandgap voltage referenceSubthreshold conductionbusiness.industryCMOSVoltage dividerElectrical engineeringlaw.inventionThreshold voltagesatellitesReference circuitCMOSlawcomplementary metal–oxide–semiconductorsResistorbusinessradiation hardeningVoltage reference2015 IEEE International Symposium on Circuits and Systems (ISCAS)
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