0000000000340396
AUTHOR
D. Scirè
Characterization of defect density states in MoOx for c-Si solar cell applications
Layers of MoOx have been deposited by thermal evaporation followed by post-deposition annealing (PDA). The density of states (DOS) distributions of the MoOx films were extracted deconvoluting the absorption spectra, measured by a phothermal deflection spectroscopy setup, including the small polaron contribution. Results revealed a sub-band defect distribution centered 1.1 eV below the conduction band; the amplitude of this distribution was found to increase with PDA temperature and film thickness.
Design and realization of a DC/DC converter with a partially saturated inductor
DC/DC converters, in some types of applications such as portable equipments, can require more space than it is actually available. The inductor is typically the most bulky element and the possibility to reduce its size can save up to 50% of the converter volume and area [1][2], thus increasing the power density. This reduction, however, comes with nonlinear effects caused by the saturation of the ferromagnetic core. An appropriate modelling of the inductor and of the converter circuit is needed for guaranteeing a good output power quality (Fig. 1). A Boost converter with an inductor in the partially saturated roll-off operating zone was designed and realized to study the behaviour of DC/DC …