6533b7d9fe1ef96bd126c830

RESEARCH PRODUCT

Characterization of defect density states in MoOx for c-Si solar cell applications

D. ScirèR. MacalusoM. MoscaS. MirabellaA. GulinoO. IsabellaM. ZemanI. Crupi

subject

c-Si solar cell photovoltaic transition metal oxide molybdenum oxide density of states small polaronSettore ING-INF/01 - Elettronica

description

Layers of MoOx have been deposited by thermal evaporation followed by post-deposition annealing (PDA). The density of states (DOS) distributions of the MoOx films were extracted deconvoluting the absorption spectra, measured by a phothermal deflection spectroscopy setup, including the small polaron contribution. Results revealed a sub-band defect distribution centered 1.1 eV below the conduction band; the amplitude of this distribution was found to increase with PDA temperature and film thickness.

yearjournalcountryeditionlanguage
http://hdl.handle.net/10447/514420