0000000000340397
AUTHOR
R. Macaluso
Characterization of defect density states in MoOx for c-Si solar cell applications
Layers of MoOx have been deposited by thermal evaporation followed by post-deposition annealing (PDA). The density of states (DOS) distributions of the MoOx films were extracted deconvoluting the absorption spectra, measured by a phothermal deflection spectroscopy setup, including the small polaron contribution. Results revealed a sub-band defect distribution centered 1.1 eV below the conduction band; the amplitude of this distribution was found to increase with PDA temperature and film thickness.
Resistive switching of anodic TiO2-based Memristors
In recent years, memristors have attracted great attention owing to their simple fabrication process, high scalability, good compatibility with the CMOS technology, high switching speed, low power consumption and low cost for next-generation non-volatile memory technology [1]. The basic cell structure of a memristor is an insulator sandwiched between two metal electrodes. Among the materials being studied for memristors fabrication, binary metal oxides, such as TiO2, are most favourable because of their simple constituents, compatible with CMOS processes, and resistive to thermal/chemical damages. Anodizing is a an electrochemical low cost process carried out at room temperature to grow oxi…
Near-Field Enhancement Optimization by Tapering Terahertz Gold Nanoantennas
We will present the simulation, fabrication and characterization of gold tapered nanoantennas, whose structure is optimized for terahertz near-field enhancement.