0000000000341543
AUTHOR
P. Dorogov
Improving the performance of CdZnTe detectors using infrared stimulation
The influence of monochromatic optical stimulation with wavelengths from 400 nm to 1100 on characteristics of the CdZnTe quasi-hemispherical detectors was studied. It was found that illumination with infrared (IR) light of wavelengths (870–900 nm) close to the absorption edge of the CdZnTe significantly improves the detectors performance at room temperature. Improvement can be achieved with low-intensity IR illumination of about 1–10 µW. The higher intensity illumination leads to degradation of the detector spectrometric characteristics. Infrared radiation penetrates into the detector sensitive volume, change the balance equilibrium between free and trapped carriers, leading to improve char…
Improving the Performance of Quasi-Hemispherical CdZnTe Detectors Using Infrared Stimulation
The influence of monochromatic optical stimulation with wavelengths from 400 to 1100 nm on the characteristics of CdZnTe quasi-hemispherical detectors was studied. It was found that illumination with infrared (IR) light with wavelengths of 870-900 nm close to the absorption edge of the CdZnTe significantly improves the performance of the detector at room temperature. Improvement can be achieved with low-intensity IR illumination at 1-300 μW depending on the chosen wavelength of illumination. Higher intensity illumination was observed to lead to the degradation of the detector's spectrometric characteristics. IR radiation was noted to influence the detector's sensitivity, changing the equili…
Investigation of the influence of light illumination on the characteristics of CdZnTe detectors
The spectral response of optical transmittance, spectrometry characteristics, output signal shapes and leakage currents of CdZnTe detectors with plane parallel electrodes under illumination with light within wavelength region of 400 – 1100 nm are presented.