0000000000343184
AUTHOR
Halvard Haug
Simulated and measured temperature coefficients in compensated silicon wafers and solar cells
Abstract In this paper we perform a thorough investigation of the temperature coefficients of c-Si solar cells and wafers, based on both experimental data and device simulations. Groups of neighboring wafers were selected from different heights of four high performance multicrystalline silicon ingots cast using different dopants concentrations and Si feedstocks; Three different target resistivities of compensated silicon ingots based on Elkem Solar Silicon (ESS®), which are purified through a metallurgical route, and one non-compensated reference ingot. The wafers were processed into Al-BSF and PERCT type solar cells, as well as into lifetime samples subjected to selected solar cell process…
A high-accuracy calibration method for temperature dependent photoluminescence imaging
This work demonstrates a novel technique for calibrating temperature dependent photoluminescence (PL) images of silicon wafers with high accuracy. The PL signal is calibrated using a heat-controlled photoconductance (PC) stage integrated into the PL imaging system. The PC signal is measured in true steady state condition and used to determine the calibration constant under the same temperature and illumination as the PL image, thus providing a high-precision calibration. This results in a robust method for imaging of important physical parameters, such as the minority carrier lifetime and the implied voltage at different temperatures, as well as the temperature coefficients and the recombin…