The peculiarities of the radiation damage accumulation kinetics in the case of defect complex formation
Abstract The kinetics of radiation defect accumulation under irradiation by heavy particles is theoretically analysed under the assumption of defect complex genesis, particularly, the ones of anion and cation vacancies. The obtained analytical mathematical model and revealed peculiarities of radiation dose dependencies can be used for analysis of the experimental results for different crystalline materials for solid-state electronics and photonics.
Optical investigation of the OH− groups in the LiNbO3 doped by copper
Doping ions and OH− groups absorption bands spatial profiles were investigated for the case of congruent LiNbO3 single crystal grown by Czochralski technique. Doping was performed after the crystal...