0000000000368394

AUTHOR

Jean Francois Carlin

showing 2 related works from this author

Defects in III-N LEDs: experimental identification and impact on electro-optical characteristics

2022

III-N light-emitting-diodes (LEDs) are subject of intense investigations, thanks to their high efficiency and great reliability. The quality of the semiconductor material has a significant impact on the electro-optical performance of LEDs: for this reason, a detailed characterization of defect properties and the modeling of the impact of defects on device performance are of fundamental importance. This presentation addresses this issue, by discussing a set of recent case studies on the topic; specifically, we focus on the experimental characterization of defects, and on the modeling of their impact on the electro-optical characteristics of the devices.

reliabilitygallium nitride; defects; indium; reliability; trap-assisted tunnelinggallium nitride defects indium reliability trap-assisted tunnelingindiumgallium nitrideSettore ING-INF/01 - Elettronicadefectstrap-assisted tunneling
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Study and optimization of near UV InGaN/GaN based Light Emitting Diodes at low injection current regimes

2006

InGaN/GaN LEDs low injection currentSettore ING-INF/01 - Elettronica
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